Investigation of Injection- and Radiation-Thermal Processes in Thin Gate Dielectric Films of MIS Structures

Key Engineering Materials. 2018. Vol. 781. P. 47–52.

Andreev D. V., Bondarenko G.G., Andreev V. V., Stolyarov A. A.

In order to modify the gate dielectric of MIS structures we suggest to implement the
injection-thermal treatment which consists in the high-field injection of electrons of set density into
the thin dielectric film and the subsequent annealing of the structure. We investigate an influence of
modes of the injection-thermal treatment onto the modification of MIS structures. We demonstrate
that the processes of MIS structure modification taking place at the injection-thermal treatment in
many respects are identical to the processes taking place at the radiation-thermal treatment. We
study an influence of modes of the high-field electron injection into the gate dielectric of MIS
structure onto densities of charge defects and the injection hardness of samples. Besides, we
research an influence of doping of the silicone dioxide film by phosphorus onto the same
characteristics.

Keywords: МДП структура, MIS structure, thin dielectric films, radiation-thermal processes, тонкие диэлектрические пленки, радиационно-термические процессы