PROBLEMS OF ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS DEVELOPMENT (MES) SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016 Part IV, Design of Electron Component Base

* Part IV: SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016. M. : Манускрипт, 2017.

Under the general editorship: А. Л. Стемпковский

Part IV of these Proceedings includes selected papers written on the basis of the best presentations of Sections 9 and 10 (“Design of Electron Component Base” and “Design of Radiation Tolerant VLSI Circuits and Components for Space Application”) of the VII All-Russia Science&Technology Conference “Problems of Advanced Micro- and Nanoelectronic Systems Development - 2016” (Moscow, Zelenograd, Oct. 03 – 07, 2016), in English. Materials of the Proceedings reflect the current state of the Russian micro- and nanoelectronics, methods and tools for development of micro- and nanoelectronic systems. The materials can be an important source of information to identify the promising areas of research and investments in the field of micro- and nanoelectronics. All the papers have been reviewed and approved by the Editorial Board of the Proceedings.

Chapters

TCAD-SPICE Two Level Simulation of Si BJTs and SiGe HBTs Taking into Account Radiation Effects

Petrosyants K., M.V. Kozhukhov, , in: PROBLEMS OF ADVANCED MICRO- AND NANOELECTRONIC SYSTEMS DEVELOPMENT (MES) SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016 Part IV, Design of Electron Component Base* Part IV: SELECTED ARTICLES of the VII All-Russia Science&Technology Conference MES-2016.: M.: ., 2017. Ch. 1 P. 2–10.

Novel TCAD and SPICE models of the Si BJTs and the SiGe HBTs taking into account influence of neutrons, protons, and gamma radiation on the device characteristics were developed. The interaction between TCAD and SPICE device models in radiation-hardened IC design flow was considered. The complete set of I-V, C-V, fT, fmax of BJT/HBT characteristics ...

Added: October 25, 2017

Keywords: проектирование цифровых систем, digital system design, Приборно-технологическое моделирование с учетом влияния температуры и радиации, TCAD simulation taking into account temperature and radiation effects, physical and layout numerical simulation, Simulation method of digital, analog and mixed circuits, Методы моделирования цифровых, аналоговых и смешанных схем и систем, Специализированные (стойкие к спецвоздействиям, фоточувствительные и т.п.) СБИС