ТЕХНОЛОГИЯ ИЗГОТОВЛЕНИЯ СИНИС-СТРУКТУР НА ОСНОВЕ Nb, NbN И Al

Приборы и техника эксперимента. 2026. № 1. С. 189–197.

Markina M. A., Чекушкин А. М., Тарасов М. А., Фоминский М. Ю.

Abstract—New technologies have been developed for the production of superconductor-insulator-normal
metal-insulator-superconductor (SINIS) structures made of Nb, NbN, and Al, which serve as sensitive elements
for radiation receivers in the terahertz and subterahertz ranges. Two-stage fabrication technology
by selective etching of niobium and modernized fabrication technology by dry selective etching and anodization
of niobium with an additional sacrificial layer of SiO2 made it possible to create structures with narrow
absorbers made of normal metal with a width of less than 10 μm. The fabricated structures have characteristics
close to those theoretically expected. The results of the work can be used for the development and fabrication
of ultra-sensitive detectors for terahertz and subterahertz ranges with operating temperatures from 1.5
to 9.0 K using optical photolithography methods, which allows their use in more accessible cryogenic systems
than He3–He4 dissolution cryostats, which are used in work with classical SINIS structures with operating
temperatures in the range of 100–300 mK, where Al is a superconductor.

Keywords: туннельный переход, сверхпроводник -изолятор-нормальный металл-изолятор - сверхпроводник (СИНИС), SNEAP(Selective Niobium Etching and Anodisation Process), жертвенный слой