Изменения в поверхностных слоях медных сплавов под действием импульсной пучково-плазменной обработки
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
The report presents the results of a comparative analysis of logical and probabilistic safety threats structure modeling techniques. It is shown that general logic probabilistic method using the functional integrity of the scherme, is most preferred for use in the problems of the consolidated risk assessment.
A comparison is made between the structure of 10 high impact papers and 50 desk-rejects. In doing so, authors are offered empirical evidence and insights into why papers that have a high impact not only differ from unsuccessful papers in terms of content, but also their structure. While excellent content is needed for high impact, appropriate structure is also required. Obtaining the appropriate structure is the first and easiest step. The intent of this editorial is to assist authors to recognize and make this important step