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Modification of MIS Structures with Thermal SiO2 Films by Phosphorus Diffusion

P. 59.
Andreev D. V., Bondarenko G., Andreev V. V., Maslovsky V. M., Stolyarov A. A.

In the paper it has been researched diffusion of phosphorus in thermal SiO2 films on MIS structure and influence of the process on charge effects in gate dielectric and at interfaces at Fowler-Nordheim high-field tunnel injection of electrons.

Language: English
Full text
Keywords: МДП-структураdiffusionдиффузияMIS structureпленкиfilms

In book

Proceedings of 10th International Conference “New Electrical and Electronic Technologies and their Industrial Implementation” (Zakopane, Poland, June 27 – 30, 2017)
Lublin: lublin University of Technology, 2017.
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