Динамика солитонов в расширенном нелинейном уравнении Шредингера с пространственным индуцированным рассеянием Рамана и экспоненциально убывающей дисперсией
A new mathematical model of heat transfer in silicon field emission pointed cathode of small dimensions is constructed which permits taking its partial melting into account. This mathematical model is based on the phase field system, i.e., on a contemporary generalization of Stefan-type problems. The approach used by the authors is not purely mathematical but is based on the understanding of the solution structure (construction and study of asymptotic solutions) and computer calculations. The book presents an algorithm for numerical solution of the equations of the obtained mathematical model including its parallel implementation. The results of numerical simulation conclude the book.
The book is intended for specialists in the field of heat transfer and field emission processes and can be useful for senior students and postgraduates.
Dynamics of solitons is considered in the framework of the extended nonlinear Schrödinger equation (NLSE), which is derived from a system of Zakharov's type for the interaction between high- and low-frequency (HF and LF) waves, in which the LF field is subject to diffusive damping. The model may apply to the propagation of HF waves in plasmas. The resulting NLSE includes a pseudo-stimulated-Raman-scattering (pseudo-SRS) term, i.e., a spatial-domain counterpart of the SRS term which is well known as an ingredient of the temporal-domain NLSE in optics. Also included is inhomogeneity of the spatial second-order diffraction (SOD). It is shown that the wavenumber downshift of solitons, caused by the pseudo-SRS, may be compensated by an upshift provided by the SOD whose coefficient is a linear function of the coordinate. An analytical solution for solitons is obtained in an approximate form. Analytical and numerical results agree well, including the predicted balance between the pseudo-SRS and the linearly inhomogeneous SOD
This proceedings publication is a compilation of selected contributions from the “Third International Conference on the Dynamics of Information Systems” which took place at the University of Florida, Gainesville, February 16–18, 2011. The purpose of this conference was to bring together scientists and engineers from industry, government, and academia in order to exchange new discoveries and results in a broad range of topics relevant to the theory and practice of dynamics of information systems. Dynamics of Information Systems: Mathematical Foundation presents state-of-the art research and is intended for graduate students and researchers interested in some of the most recent discoveries in information theory and dynamical systems. Scientists in other disciplines may also benefit from the applications of new developments to their own area of study.
By using superconducting quantum interference device (SQUID) magnetometry, we investigated anisotropic high-field (H less than or similar to 7T) low-temperature (10 K) magnetization response of inhomogeneous nanoisland FeNi films grown by rf sputtering deposition on Sitall (TiO2) glass substrates. In the grown FeNi films, the FeNi layer nominal thickness varied from 0.6 to 2.5 nm, across the percolation transition at the d(c) similar or equal to 1.8 nm. We discovered that, beyond conventional spin-magnetism of Fe21Ni79 permalloy, the extracted out-of-plane magnetization response of the nanoisland FeNi films is not saturated in the range of investigated magnetic fields and exhibits paramagnetic-like behavior. We found that the anomalous out-of-plane magnetization response exhibits an escalating slope with increase in the nominal film thickness from 0.6 to 1.1 nm, however, it decreases with further increase in the film thickness, and then practically vanishes on approaching the FeNi film percolation threshold. At the same time, the in-plane response demonstrates saturation behavior above 1.5-2T, competing with anomalously large diamagnetic-like response, which becomes pronounced at high magnetic fields. It is possible that the supported-metal interaction leads to the creation of a thin charge-transfer (CT) layer and a Schottky barrier at the FeNi film/Sitall (TiO2) interface. Then, in the system with nanoscale circular domains, the observed anomalous paramagnetic-like magnetization response can be associated with a large orbital moment of the localized electrons. In addition, the inhomogeneous nanoisland FeNi films can possess spontaneous ordering of toroidal moments, which can be either of orbital or spin origin. The system with toroidal inhomogeneity can lead to anomalously strong diamagnetic-like response. The observed magnetization response is determined by the interplay between the paramagnetic-and diamagnetic-like contributions.
Many electronic devices operate in a cyclic mode. This should be considered when forecastingreliability indicators at the design stage.The accuracy of the prediction and the planning for the event to ensure reliability depends on correctness of valuation and accounting greatest possiblenumber of factors. That in turn will affect the overall progress of the design and, in the end,result in the quality and competitiveness of products