Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
In this work we study characteristics of the III-V microdisk lasers bonded onto silicon board. The bonding of microdisk lasers to the silicon substrate reduces their thermal resistance. Here we show improvement in output power, lasing threshold, dynamic characteristics and energy consumption in microdisk lasers with diameters of 31 μm and 19 μm by comparison of the characteristics obtained before and after bonding. Also, estimation of energy-to-data ratio was performed at 13 °C and 20 °C for a 19 μm microdisk lasers after bonding.