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News
August 25, 2026
Scientists Develop Algorithm for More Reliable Processors in Data Centres
Researchers from HSE MIEM and Samara University have developed the LRF-3D algorithm to automatically bypass idle nodes in three-dimensional networks-on-chip. Thanks to its hierarchical architecture, the algorithm outperforms existing solutions in both speed and path accuracy, improving processor reliability for use in data centres, supercomputers, and AI computing. The source code and test results are publicly available.
August 24, 2026
Researchers Develop Method for Direct Generation of Regulatory DNA
Researchers at HSE University have developed a model for generating promoters and enhancers—DNA sequences that regulate gene activity. The model works directly with DNA nucleotides, without first transforming them into a continuous numerical representation. This solution could be useful for applications in synthetic biology and gene therapy. The study results were presented at the ICLR 2026 Workshop ‘Generative AI in Genomics (Gen^2): Barriers and Frontiers.’
August 21, 2026
Social Integration: At the Crossroads of Knowledge and Values
The International Laboratory for Social Integration Research (ILSIR) at HSE University studies the challenges faced by vulnerable groups and explores ways to help them participate fully in everyday life. To develop effective solutions, the laboratory’s researchers combine cutting-edge methods with practical fieldwork. In this interview with the HSE News Service, Laboratory Head Elena Iarskaia-Smirnova discusses the laboratory’s work.

 

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Directional single-mode emission from InGaAs/GaAs quantum-dot half-disk microlasers

IEEE Photonics Technology Letters. 2022. Vol. 34. No. 24. P. 1349–1352.
Fedor I. Zubov, Eduard I. Moiseev, Mikhail V. Maximov, Vorobyev A., Mozharov A., Kalyuzhnyy N., Mintairov S., Kulagina M., Natalia V. Kryzhanovskaya, Alexey E. Zhukov

We report on the fabrication and studies of
Ø100 μm half-disk lasers with an active region based on
InGaAs/GaAs quantum dots providing very high modal gain.
Such resonators support whispering gallery modes propagating
at the cavity periphery. The microlasers show directional light
outcoupling: continuous-wave output power emitted from the
flat side reaches 17 mW, which is about 7 times greater than
the power emitted from the back semicircular side. Single-mode
lasing in a wide range of the injection currents is observed. P-side
down bonding of the devices onto Si-board allowed increasing the
maximum optical power to more than 30 mW and the lasing was
observed up to 93C. The 3 dB modulation bandwidth of 4.6 GHz
was measured likely being limited by RC-parasites.

Research target: Physics Nanotechnologies
Language: English
Full text
DOI
Text on another site
Keywords: квантовые точкиquantum dotsmicrocavityмикрорезонаторполупроводниковый лазерmicrolaserмикролазерыDiode laser
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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