In situ x-ray reflectivity for thin-film deposition monitoring and control
This edition presents abstracts of the reports of the Meeting and Youth Conference on Neutron Scattering and Synchrotron Radiationin Condensed Matte (NSSR-CM-2014)r
In this work authors presented new approach to investigation of multilayer heterostructures by joint calculation HRXRD and XRR data.
Method of in-situ X-ray reflectivity is presented. The results of investigation of titanium and silicon thin films in real-time of their deposition on silicon substrates are discussed.
At present particular attention is given to techniques which allow the monitoring of single layer and multilayer thin film materials directly during their formation - in-situ methods. Application of these methods helps to ensure a film with desired characteristics, allowing quickly adjust process conditions. The paper describes the possibilities of the in-situ X-ray reflectivity to determine the parameters of nanoscale films in real time of their formation. Experimental results on the magnetron deposition of nanoscale Si films and other materials on silicon substrates are presented.
The charge state change of MOS structures with multilayer dielectric films SiO2–PSG under highfield injection modification at different temperatures is studied in this article. The effect of temperature on the thermal stability of the negative charge component used to adjust the threshold voltage of MOS transistors is investigated. It is found that the performance of the highfield injection modification of MOS structures in the mode of constant current at elevated temperatures increases not only the density of the trapped negative charge but also its thermally stable component.
Main regularities of the influence of the air adsorbate on the interpretation of images of thin metal films were experimentally determined in the scanning tunneling microscopy (STM). Modification of the surface relief of a thin film of Pt was made in air.Effect of formation of surface structures of 50-100 nm, a cluster of polarized adsorbate molecules by a strong electric field in the electrode gap, was defined. Tunnel voltage and current threshold values of irreversible relief changes was obtained. Technique of local adsorbate removal from the test surface area was developed by pulse contactless interaction of STM electrodes.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.