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October 19, 2026
'Cultural Studies Seeks to Understand What Lies Beneath the Surface of Everyday Things'
Maxim Zhiganov has been exploring different aspects of sound for many years—first in relation to his native Perm and then on a broader, global scale. In this interview for the HSE Young Scientists project, he talks about sound maps, the special issue of the journal Logos, and why it is important to make the familiar less clear and obvious.
October 14, 2026
At HSE University–St Petersburg, Experts Discuss How AI Changes Tourist Routes and Cultural Heritage
Neural networks are no longer simple travel assistants; now they decide what to include on the route and what to skip. Artificial intelligence changes how people perceive a place and shapes the image of tourist centres. At the II International Scientific and Practical Conference ’Information Technologies in the Preservation and Promotion of Cultural Heritage,’ researchers discussed who controls algorithmic solutions and in what ways, and whether authentic traditions get lost in them.
October 12, 2026
Road Injuries Leading Cause of Death Among Men Aged 10 to 39
Worldwide, road injuries are the leading cause of death among males aged 10–39. An international team of researchers reached this conclusion as part of the Global Burden of Disease Study 2023, analysing data from 204 countries between 1990 and 2023. Their findings have been published in The Lancet Public Health, with HSE University Professor Vasily Vlassov listed among the collaborators.

 

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Molecular-Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures

Physica Status Solidi - Rapid Research Letters. 2022. Vol. 16. No. 7. Article 2200056.
Reznik R., Ilkiv I., Kotlyar K., Gridchin V., Bondarenko D., Lendyashova V., Ubyivovk E., Anna S. Dragunova, Natalia V. Kryzhanovskaya, Cirlin G. E.

Combinations of III–V nanowires (NWs) with quantum dots (QDs) are promising building blocks for quantum light sources. Herein, for the first time, the results of growing AlGaAs NWs with InGaAs QDs by molecular-beam epitaxy on a silicon substrate are shown. The optimal growth temperature is determined and the physical properties of the grown nanostructures are studied. It is shown that the grown nanostructures exhibit photoluminescence (PL) signal up to room temperature in a wide wavelength range, including 1.3 μm emission which is important for the optical fiber transmission. It is found that in addition to InGaAs QDs radial InGaAs quantum wells are formed inside the NWs as a result of lateral/axial InGaAs growth competition. The proposed technology opens up new possibilities for the integration of direct-band III–V materials with the silicon platform for various applications in the field of silicon photonics and quantum communication technology.

Research target: Physics Nanotechnologies
Language: English
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Keywords: квантовые точкикремнийsiliconquantum dotsnanowiresmolecular-beam epitaxyмолекулярно-пучковая эпитаксиянитевидные нанокристаллыIII–V semiconductorsA3B5 полупроводники
Publication based on the results of:
Study of optical properties and dynamic processes in new A3B5 semiconductor nanoheterostructures, prospective for use as an active region of light-emitting and photosensitive optoelectronic devices (2022)
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