Multilevel current stress technique for investigation thin oxide layers of MOS structures
In this study, a new technique of multilevel current stress for investigation thin oxide layers of MOS structures is proposed. This technique allows to investigate the generation and relaxation of positive and negative charges, accumulating in, nano-thickness gate dielectric of MOS structures under many stressing situations. The parameters characterizing the change of charge state in the thin oxide layers of MOS structures during the stress have been monitored by means of time dependence of voltage shift applied to a sample during the injection. In comparison with the conventional techniques our method is nondestructive. We consider this method to provide higher accuracy and to decrease the probability of dielectric breakdown. The application of present technique was carried out during the investigation of charge generation and relaxation, during and after high-field tunnel injection of electrons in thin film of SiO2. The thin oxide layers of MOS structures after plasma and irradiation treatments also are investigated.
In this work we have developed an experimental automatized setup based on PXI platform and LabVIEW by National Instruments to investigate parameters of thin dielectric films of MIS structures. The setup allows to implement the method of high-field tunnel injection of charge carriers under the stress and measurement modes. For the method the main injection of charge into gate dielectric is realized under stress modes at which either voltage, applied to the gate, or current, flowing through the dielectric, is held constant. In order to obtain additional information about changing of charge state of MIS structure one should analyze not only time dependencies of currents and voltages during the stress conditions but, besides, a change of current-voltage characteristics of MIS structure which are acquired before and after injection at measurement level of currents and voltages that are significantly lower than stress levels. As a result, charge effects, which can be observed in MIS structure at the time of stress mode setting, become available to be researched. Besides, that makes possible to take into account an influence of the charge effects to a change of the charge state of gate dielectric under high-field injection of charge carriers.
The article presents the results of a study of organizational culture of enterprises in accordance with the new methodology focused on identification of its two levels: the declared and actual ones. Compilation of the data of the analysis allowed characterizing six variants of a combination of such levels.
One of the approaches to the assessment of threats, vulnerabilities and risks in the protection of information in organizations , allowing to fully analyze and document requirements related to information security in the organization. Using this approach will allow to avoid the costs of redundant safety measures arising from the subjective assessment of the risks to assist in planning and implementing protection at all stages of the life cycle of information systems, and ensure that work under tight deadlines. Practical recommendations for the choice of countermeasures and evaluate the effectiveness of countermeasures to compare their various options.
The article covers problems of a choice of strategy for advance of products at develop-ment of foreign markets. The author offered the technique of choosing of the specified strategy based on adaptation of a matrix of the Boston Consultative group for adoption of strategic deci-sions during planning.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.