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Regular version of the site
Of all publications in the section: 6
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Article
Bondarenko G.G., Kristya V. I. IOP Conference Series: Materials Science and Engineering (MSE). 2017. Vol. 168. No. 012008. P. 1-5.

An approximate analytical expression for the ion current density near the cathode in glow discharge is obtained in the presence of a periodic relief of small amplitude and an insulating oxide film of varying thickness on its surface. It is found that ion focusing at the cathode sections with the minimum film thickness, located on any parts of the surface relief,takes place, resulting in an increase of the film thickness non-uniformity with time. Therefore,under the existence of an oxide film on the cathode, its sputtering in glow discharge is determined mainly by the film thickness non-uniformity and not by the surface relief.

Added: Feb 17, 2017
Article
Andreev D. V., Bondarenko G.G., Andreev V. V. et al. IOP Conference Series: Materials Science and Engineering (MSE). 2017. Vol. 168. No. 012057. P. 1-6.

We developed new method of stress and measurement current levels to research and

modify thin dielectric of MIS structures under high-field injection of electrons. This method

allows to take into account processes of MIS structure capacity charging and trapping of charge

in gate dielectric of MIS structure when injection mode. It is shown that when a high density of

the injection current, a characteristics control of charge, which accumulates in gate dielectric,

when realizing the method of stress and measurement current, is necessary to implement by

monitoring of voltage change on MIS structure when amplitude of measurement injection

current is lower than amplitude of stress current. In order to rise performance of the method

and implement a possibility of researching of fast relaxation charges, which is accumulated in

gate dielectric during the process of high-field stress influence, we suggest to realize charging

and discharging of MIS structure in accelerated regime when higher density of measurement

current takes place.

Added: Feb 20, 2017
Article
Andreev D. V., Bondarenko G., Andreev V. V. et al. IOP Conference Series: Materials Science and Engineering (MSE). 2016. Vol. 110. No. 012041. P. 1-6.

We have investigated processes of modification and changing of the charge state of MOS structures having a multilayer gate dielectric based on a thermal SiO2 film doped with phosphorus under conditions of different modes of high-field electron injection and an electron irradiation. We have determined that negative charge, accumulating in the phosphosilicate glass (PSG) ultra thin film of the MOS structures having the two-layer gate dielectric SiO2-PSG under conditions of both high-field tunneling injection of electrons and electron beam, could be used for a modification of devices having the same structure (e.g. correction of threshold voltage, increase of charge stability and breakdown voltage of MOS structure). We have shown that when thickness of PSG film increased, a raising of the electron traps density occurred, but the value of the cross-section of electron traps was the same. It was established that in order to obtain MOS structures with high thermal stability, one has to anneal them at 200° C after performing irradiation treatment.

Added: Feb 24, 2016
Article
Andreev V. V., Bondarenko G., Maslovsky V. M. et al. IOP Conference Series: Materials Science and Engineering (MSE). 2012. Vol. 41. No. 012017. P. 1-9.

In this study, a new technique of multilevel current stress for investigation thin oxide layers of MOS structures is proposed. This technique allows to investigate the generation and relaxation of positive and negative charges, accumulating in, nano-thickness gate dielectric of MOS structures under many stressing situations. The parameters characterizing the change of charge state in the thin oxide layers of MOS structures during the stress have been monitored by means of time dependence of voltage shift applied to a sample during the injection. In comparison with the conventional techniques our method is nondestructive. We consider this method to provide higher accuracy and to decrease the probability of dielectric breakdown. The application of present technique was carried out during the investigation of charge generation and relaxation, during and after high-field tunnel injection of electrons in thin film of SiO2. The thin oxide layers of MOS structures after plasma and irradiation treatments also are investigated.

Added: Jan 17, 2013
Article
Rizakhanov R., Barmin A., Rudshtein R. et al. IOP Conference Series: Materials Science and Engineering (MSE). 2015. Vol. 81. No. 1. P. Article number 012029.
The work has to do with optimization of vacuum-free material working processes with using the concentrated electron beam. A method for direct experimental determination of primary electrons local characteristics in the dense gaseous medium was proposed. The meter design and the measurement procedure were described. The analytical method for evaluation of the electron beam local parameters in the dense gaseous medium was developed. The method was used for evaluation of kinematic characteristics of detector displacement device. © Published under licence by IOP Publishing Ltd.
Added: Sep 7, 2015
Article
Kislov S. V., Kislov V. G., Balasch P. V. et al. IOP Conference Series: Materials Science and Engineering (MSE). 2016. Vol. 110. No. 012096. P. 1-5.

The article describes the advantages of the new technology of mineral coating of metal products for the friction pair of mechanical systems. It presents the research results of the wear rate of the samples made of 12X13 steel (X12Cr13) with mineral layers, in the experiments with a piston ring sliding inside a cylinder liner with grease. The wear rate of the samples with mineral layers is lower almost by two factors than that of the samples made of grey foundry iron and untreated samples. As the result of slip/rolling abrasion tests of parts with mineral layers under conditions of high contact pressure, a suggestion was made concerning probable mechanics of surface wear.

Added: Feb 24, 2016