Photoconductivity and infrared-light absorption in p-GaAs/AlGaAs quantum wells
The low-temperature impurity-assisted photoconductivity and absorption spectra of a nanostructure
with acceptor-doped multiple GaAs/AlGaAs quantum wells are investigated. The experimental absorption
and photoconductivity spectra agree well with each other. Using the calculated energy spectrum of the
hole and acceptor states in the quantum wells, the contributions of the transitions of holes from the ground
acceptor state to the delocalized states of valence subbands and excited impurity states, and the contributions
of the acceptor photoionization to the states above a quantum well, are identified.