Установка для измерения температурной зависимости показателя преломления твердых тел
The conference is devoted to fundamental problems of semiconductor physics.Main sections of the program: 1. Bulk semiconductors: electrical and optical properties, relaxation of charge carriers, ultrafast phenomena, excitons, phonons, phase transitions, ordering. 2. Surface, films, layers: epitaxy, atomic and electronic structure of the surface, adsorption and surface reactions, processes of formation (self-organization) of nanoclusters, STM and AFM, optical microscopy of the near field. 3. Heterostructures, superlattices, one-dimensional systems: structural and optical properties, electronic transport. 4. Two-dimensional systems: structural, electronic, magnetic and optical properties, tunneling, localization, phonons, plasmons, quantum Hall effect, correlation effects. 5. Zero-dimensional systems (quantum dots, nanocrystals): energy spectrum, optical properties, tunnel transport. 6. Spin phenomena, spintronics, nanomagnetism. 7. Impurities and defects (bulk semiconductors and quantum-dimensional structures): impurities with shallow and deep levels, magnetic impurities, structural defects, disordered semiconductors. 8. High-frequency phenomena in semiconductors (microwave and terahertz range). 9. Carbon and graphene-like nanomaterials, transition metal dichalcogenide monolayers, perovskites, organic semiconductors, molecular systems. 10. Photonic crystals, microresonators and metamaterials. Nanophotonics. 11. Semiconductor devices: technology, research methods, and nanodevices. 12. Nano-and optomechanics. 13. Topological insulators and Weyl semimetals.Выделите текст, чтобы посмотреть примерыДелитесь своими подборкамиСоздавайте подборки переводов для учёбы, работы или просто так и используйте вместе с друзьямиПопробоватьПримерыУстановите приложение на смартфон и работайте офлайн+Установить ПереводчикСообщение отправленоОтправить ещё разПереводите в Яндекс.Браузере
The photoemission of free charge carriers into high-ohmic semiconductor created by light illumination of near-contact-area of ohmic contacts to cadmium telluride sample was investigated. It was revealed, that near-contact-area light illumination influences both on contact transition resistance and on volume conductivity of the crystal due to increasing of main charge carrier concentration. The method of separate determination of contact transition and sample volume resistances, suitable for high-ohmic semiconductors, was suggested.
The paper examines the studies that devoted to simulation the instrument amplifier on a printed circuit board made of a nanoconductive dielectric. The main aim of the work is simulation of instrumentation amplifier protected from electrostatic discharges, using the LTspice. In connection with the fact that any dielectric in a spacecraft can lead to electrostatic discharge, it is proposed to replace high-resistivity insulators with nanoconductive dielectrics. This approach is widely used in the feasibility study of next-generation satellites, which confirms the practical feasibility of this concept.
It was investigated influence of modes of laser removal of thin films from a surface of glass К8 on change of its transparent coefficient. Removal of thin films was made at various lengths of impulses of laser radiation - 200 mks, 100 ns and 12 ns.
The construction of a microstrip lowpass filter presents metallic conductors in the form of parallel sections of zigzag-lines and symmetrically located between them dielectric zigzag insertion, made on a dielectric subscript of policor, and has a much more coefficient of dieing (S21 parameter) and the steepness of the front of the amplitude-frequency characteristic, in the difference of the construction of three parallel metallic zigzag-lines. The simultaneous use of periodic slow-wave structures of metal and dielectric in the microstrip devices also allows us to make a bandpass filter. Constructively such a filter is made on a dielectric subscript of policor, contains a metallic conductor in the form of a section of a zigzag-line and a periodic structure of dielectric insertions. Such a construction demonstrates a presence of the second, lower frequency of shearing, caused by the periodicity of the insertions-resonators, what allows us to get a filter with the band 2,0...2,7 GHz. The connecting of the opposite ends of the dielectric insertions with the metallic screen allows us to change the band width of the filter.
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.