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Regular version of the site

Article

Improved performance of InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon board

Optics Letters. 2021. Vol. 46. No. 16. P. 3853-3856.
Зубов Ф. И., Максимов М. В., Moiseev E., Berdnikov Y., Kryzhanovskaya N., Zhukov A.

We study the impact of improved heat removal on the performance
of InGaAs/GaAs microdisk lasers epi-side down
bonded onto a silicon substrate. Unlike the initial characteristics
of microlasers on a GaAs substrate, the former’s
bonding results in a decrease in thermal resistance by a factor
of 2.3 (1.8) in microdisks with a diameter of 19 (31) m,
attributed to a thinner layered structure between the active
region and the substrate and the better thermal conductivity
of Si than GaAs. Bonded microdisk lasers show a
2.4–3.4-fold higher maximum output power, up to
21.7 mW, and an approximately 20% reduction in the
threshold current. A record high 3 dB small-signal modulation
bandwidth of 7.9 GHz for InGaAs/GaAs microdisk
lasers is achieved.