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Эффективный полупроводниковый источник одиночных фотонов красного спектрального диапазона
Письма в Журнал экспериментальной и теоретической физики. 2019. Т. 109. № 3. С. 147-151.
Рахлин М. В., Беляев К. Г., Климко Г. В., Седова И. В., Кулагина М. М., Задиранов Ю. М., Трошков С. И., Гусева Ю. А., Терентьев Я. В., Ivanov S., Торопов А. А.
Yurasov D. V., Baidakova N. A., Verbus V. A. et al., Semiconductors 2019 Vol. 53 No. 10 P. 1324-1328
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Соловьев В. А., Чернов М. Ю., Комков О. С. et al., Письма в Журнал экспериментальной и теоретической физики 2019 Т. 109 № 6 С. 381-386
Методом молекулярно-пучковой эпитаксии на подложках GaAs (001) выращены метаморфные квантово-размерные гетероструктуры InAs(Sb)/InGaAs/InAlAs с тонкими (1–5 нм) сильнонапряженными вставками GaAs и InAs в градиентном метаморфном буферном слое InxAl1−xAs. Показано, что использование вставки GaAs толщиной 5 нм в области метаморфного буферного слоя при x∼0.37 приводит к почти двукратному возрастанию интенсивности фотолюминесценции при 300 К (λ∼3.5мкм) из квантовой ямы InAs/InGaAs, содержащей монослойную вставку InSb. ...
Added: May 31, 2021
Smirnov K., Вахтомин Ю. Б., Смирнов А. В. et al., Вестник Новосибирского государственного университета. Серия: Физика 2010 Т. 5 № 4 С. 63-67
This work presents the results of the development and fabrication of sensitive and ultrafast detectorsbased on thin film superconducting nanostructures: hot-electron bolometers (HEBs) and visible and infrared superconducting singe photon detectors (SSPDs). The main operational principles of the superconducting devices are presentedas well as the technology of fabrication of the detectors and their main types ...
Added: October 12, 2017
Blokhin S., Неведомский В. М., Бобров М. А. et al., Физика и техника полупроводников 2020 Т. 54 № 10 С. 1088-1096
The GaAs-InGaAsP heterointerfaces formation have been studied and optimized using a direct intermolecular wafer bonding (fusion)of an active region heterostructure on an InP substrate and distributed Bragg reflector heterostructures on GaAs substrates for the fabrication of hybrid heterostructures of long-wave vertical-cavity surface-emitting lasers (VCSEL). The heterostructures were grown by solid-source molecular beam epitaxy. It was ...
Added: December 10, 2020
Остроумова Г. М., Орехов Н. Д., Stegailov V., Diamond and Related Materials 2019 Vol. 94 P. 14-20
Formation of carbon nanoparticles is an important type of complex non-equilibrium processes that require precise atomistic theoretical understanding. In this work, we consider the process of ultrafast cooling of pure carbon gas that results in nucleation of an onion-like fullerene. The model is based on molecular dynamics simulation with the interaction between carbon atoms described ...
Added: February 22, 2019
Максимов М. В., Nadtochiy A., Zhukov A., Письма в Журнал технической физики 2020 Т. 46 № 24 С. 11-14
High-speed photodetectors based on InGaAs / GaAs quantum well-dots nanostructures are investigated with frontal and edge input of radiation. Photodetector with 40 rows of quantum well-dots
demonstrated a spectral sensitivity up to 0.4 A / W in the range 900–1100 nm at a bias of –5 V.
The decay time constant of the pulse response of a ...
Added: October 30, 2020
Gridchin V., Kotlyar K., Reznik R. et al., Nanotechnology 2021 Vol. 32 No. 33 Article 335604
InGaN nanostructures are among the most promising candidates for visible solid-state lighting
and renewable energy sources. To date, there is still a lack of information about the influence of
the growth conditions on the physical properties of these nanostructures. Here, we extend the
study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam
epitaxy. The results ...
Added: August 30, 2021
Луценко Е. В., Ржеуцкий Н. В., Нагорный А. В. et al., Квантовая электроника 2019 Т. 49 № 6 С. 535-539
Исследованы стимулированное излучение и фотолюминесценция сверхтонких квантовых ям GaN с номинальной толщиной 1.5–2 монослоя (МС) и барьерными слоями AlN толщиной 4–6.66 МС, полученных с помощью плазменно-активированной молекулярно-пучковой эпитаксии на подложках c-сапфира. Получено стимулированное излучение ТЕ поляризации в сверхтонких квантовых ямах GaN/AlN при накачке непосредственно в квантовые ямы. Длина волны стимулированного излучения варьировалась от 262 до ...
Added: February 25, 2021
Voronina E. N., Lev S. Novikov, RSC advances 2013 Vol. 3 No. 35 P. 15362-15367
We apply first principles calculations to compare the carbon and boron nitride nanotube unzipping under atomic oxygen impact. We show that the attack of several oxygen atoms can cause bond breaking in nanotubes, but the structure of boron nitride nanotubes is less damaged than the structure of carbon ones. With increasing diameter, the structural damage ...
Added: March 2, 2015
Melentiev P. N., Balykin V. I., Успехи физических наук 2019 Т. 189 № 3 С. 282-291
The main results obtained recently at the Laboratory of Laser Spectroscopy, Institute of Spectroscopy of the Russian Academy of Sciences in researching and developing various 2D optical elements for surface plasmon waves and their characterization using near-and far-field methods are presented. They include an optical medium for plasmon waves, a plasmon interferometer, a parabolic mirror ...
Added: December 20, 2019
Novikov L., Voronina E. N., Chirskaya N. P., Inorganic Materials: Applied Research 2014 Vol. 4 No. 2 P. 107-115
Features of formation and migration of radiation-induced defects in carbon nanotubes (CNT) and nanostructured materials are examined. The main methods and software tools used for the simulating nanomaterial structure and space factors are described. The results of mathematical simulation are presented. ...
Added: March 2, 2015
Сорокин С. В., Авдиенко П. С., Седова И. В. et al., Физика и техника полупроводников 2019 № 8 С. 1152-1158
Представлены результаты исследования структурных и оптических свойств двумерных (2D) слоев GaSe, выращенных методом молекулярно-пучковой эпитаксии на подложках GaAs(001) и GaAs(112) при использовании источника Se с высокотемпературным разложителем и клапаном. Определено влияние параметров роста (температуры подложки, интенсивности потока атомов Ga, отношения падающих потоков Se/Ga) на морфологию поверхности выращенных слоев. С помощью методов просвечивающей электронной микроскопии, электронной ...
Added: May 31, 2021
Chernenko N. E., Makhov I., Balakirev S. V. et al., St. Petersburg Polytechnical University Journal: Physics and Mathematics 2023 Vol. 16 No. 3.1 P. 64-68
In this work we present the results of experimental studies of the InAs/GaAs quantum dot formation in subcritical growth modes on nanopatterned substrates. For this purpose, we used two ways for surface patterning: local droplet etching and modified oxide desorption technique. We have experimentally shown that both methods allow in situ formation of nanosized pits ...
Added: February 5, 2024
Пенкина П.В., Кожаев М. А., Капралов П. О. et al., Известия РАН. Серия физическая 2019 Т. 83 № 12 С. 1713-1717
Dependences of the magnitude of transversal magneto-optical Kerr effect (TMOKE) on the external magnetic field for W/Py and Bi₂Se₃/Py types of nanostructures were obtained. The influence of the geometry of Py-containing structures on the magnitude of TMOKE in transmitted light and their magnetic anisotropy was demonstrated. ...
Added: December 7, 2019
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
Korneev Alexander, Korneeva Y., Manova N. et al., IEEE Transactions on Applied Superconductivity 2013 Vol. 23 No. 3 P. 2201204
In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm ...
Added: March 7, 2014
Юрасов Д. В., Байдакова Н. А., Verbus V. A. et al., Физика и техника полупроводников 2019 Т. 53 № 10 С. 1360-1365
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and selective chemical etching using the “stress concentration” approach. To provide a heat sink from Ge microstructures, their formation scheme is modified so ...
Added: October 24, 2019
Zhukov A., Applied Physics B: Lasers and Optics 2018 Vol. 124 No. 2 Article 21
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, ...
Added: March 16, 2021
Кривцов А. С., Морозов Н. В., Фирсова А. Д. et al., Доклады Академии наук 2003 Т. 391 № 6 С. 764-768
Существование однослойных нанотрубок, не нагруженных внутренним давлением, свидетельствует о необходимости учета моментного взаимодействия между атомами. В противном случае, слой атомов, формирующий нанотрубку, не имел бы изгибной жесткости, а стало быть, однослойная нанотрубка была бы неустойчива.
Ситуация здесь та же, что и в континуальной макромеханике. В основе таких популярных в инженерных расчетах континуальных моделей, как стержни и ...
Added: March 30, 2013
Lusche R., Semenov A., Il'in K. et al., IEEE Transactions on Applied Superconductivity 2013 Vol. 23 No. 3 P. 2200205-1-2200205-5
We present thorough measurements of the intrinsic detection efficiency in the wavelength range from 350 to 2500 nm for meander-type TaN and NbN superconducting nanowire single-photon detectors with different widths of the nanowire. The width varied from 70 nm to 130 nm. The open-beam configuration allowed us to accurately normalize measured spectra and to extract ...
Added: March 13, 2014
Kovalyuk V., Hartmann W., Kahl O. et al., Optics Express 2013 Vol. 21 No. 19 P. 22683-22692
We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated ...
Added: March 13, 2014
Букатин А. С., Mukhin M., Мухин И. С., СПб. : Издательско-полиграфическая ассоциация высших учебных заведений, 2021
Современные нанотехнологии давно нашли свое место в области лазерных и светоизлучающих структур, фотоэлектрических преобразователей, элементов оптоэлектроники и нанофотоники, а также в других областях науки и технологии. Одним из наиболее ярких примеров применения нанотехнологий является развития микропроцессорной техники, где за несколько последних десятилетий топологический размер затворов транзисторов уменьшился с единиц микрометров до единиц нанометров. Это привело ...
Added: April 13, 2021
Zhukov A E, Optics Express 2018 Vol. 26 No. 11 P. 13985-13994
We report room temperature injection lasing in the yellow–orange
spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained
InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic
vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the
<111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier
insertions ...
Added: February 10, 2020
Н. Новгород : Издательство Нижегородского государственного университета им. Н.И. Лобачевского, 2015
НАНОФИЗИКА И НАНОЭЛЕКТРОНИКА
Труды
XIX Международного симпозиума
Нижний Новгород, 10–14 марта 2015 г.
Том I: секции 1, 2, 4, 5
Нижний Новгород
Издательство Нижегородского госуниверситета
2015 ...
Added: February 26, 2017