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Особенности вольт-амперной характеристики микродисковых лазеров на основе квантовых ям-точек InGaAs/GaAs

Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in the effective current flow area.