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Optically-pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad
Applied Physics B: Lasers and Optics. 2018. Vol. 124. No. 2. Article 21.
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, aiming to separate the tube from GaAs substrate and thus to decrease the substrate loss, which finally enables lasing with ultralow threshold power (~ 4 μW) from an microtube ring resonator.
Priority areas:
engineering science
Language:
English
Максимов М. В., Nadtochiy A., Zhukov A., Письма в Журнал технической физики 2020 Т. 46 № 24 С. 11-14
High-speed photodetectors based on InGaAs / GaAs quantum well-dots nanostructures are investigated with frontal and edge input of radiation. Photodetector with 40 rows of quantum well-dots
demonstrated a spectral sensitivity up to 0.4 A / W in the range 900–1100 nm at a bias of –5 V.
The decay time constant of the pulse response of a ...
Added: October 30, 2020
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Ledentsov N. N., Shchukin V. A., Shernyakov Y. M. et al., Solid-State Electronics 2019 Vol. 155 P. 129-138
We report simulation of the conduction band alignment in tensile–strained GaP–enriched barrier structures and
experimental results on injection lasing in the green–orange spectral range (558–605 nm) in
(AlxGa1–x)0.5In0.5P–GaAs diodes containing such barriers. The wafers were grown by metal–organic vapor phase
epitaxy side–by–side on (8 1 1)A, (2 1 1)A and (3 2 2)A GaAs substrates, which surface orientations ...
Added: March 16, 2021
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Light: Science and Applications 2021 Vol. 10 P. 1-11
The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes. Owing to the total internal reflection of light on the sidewalls, a high Q-factor is achieved until the diameter is comparable to the wavelength. The light emission predominantly occurs in the plane of the structure, which facilitates the microlaser integration with ...
Added: April 19, 2021
Nadtochiy A., Максимов М. В., Mintairov S. et al., Physica Status Solidi (B): Basic Research 2018 Vol. 255 No. 9 Article 1800123
Dense arrays of carrier localizing indium-rich regions (referred to as quantum
well-dots, QWDs) formed inside an indium-depleted residual quantum well
by metalorganic vapor phase epitaxial deposition of 4–16 monolayers (ML) of
InxGa1xAs (0.3<x<0.5) on 6 misoriented GaAs (100) substrates are
studied. It is shown that in addition to QWDs the deposited layers may
contain other objects with size and shape ...
Added: March 16, 2021
Moiseev E., Kryzhanovskaya N., Максимов М. В. et al., Письма в Журнал технической физики 2019 Т. 45 № 19 С. 37-39
Injection microlasers with an active region based on arrays of InGaAs/GaAs quantum well-dots,
formed by deep etching, have been studied. The manner in which the current–voltage characteristic changes
when the diameter microlaser is reduced shows that a nonelectrically conducting layer with thickness of about
1.5 μm is formed near the side surface, which leads to a decrease in ...
Added: March 16, 2021
Melentiev P. N., Balykin V. I., Успехи физических наук 2019 Т. 189 № 3 С. 282-291
The main results obtained recently at the Laboratory of Laser Spectroscopy, Institute of Spectroscopy of the Russian Academy of Sciences in researching and developing various 2D optical elements for surface plasmon waves and their characterization using near-and far-field methods are presented. They include an optical medium for plasmon waves, a plasmon interferometer, a parabolic mirror ...
Added: December 20, 2019
Gordeev N. Y., Максимов М. В., Payusov A. S. et al., Semiconductor Science and Technology 2021 Vol. 36 No. 1 Article 015008
We study material gain of a novel type of quantum heterostructures of mixed (0D/2D)
dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a
broad range of injection currents (30–1200 A cm−2 per-layer) we studied edge-emitting lasers
with various numbers of InGaAs/GaAs QWD layers in the active region and different
waveguide designs. The dependence of ...
Added: March 11, 2021
Фетисова М. В., Корнев А. А., Букатин А. С. et al., Письма в Журнал технической физики 2019 Т. 45 № 23 С. 10-13
It is demonstrated that microdisk lasers about 10 μm in diameter with an active region based on
InAs/InGaAs quantum dots synthesized on GaAs substrates can be used for biodetection. Chimeric monoclonal
antibodies against the CD20 protein that are covalently attached to the surface of microdisk lasers
operating in an aqueous medium under optical pumping and room temperature were ...
Added: March 16, 2021
Mao G., Wang Q., Chai Z. et al., Materials Science in Semiconductor Processing 2018 Vol. 79 No. 6 P. 20-23
We realized the excellent confinement of carriers in single-layer InAs quantum dots (QDs) via introducing two
AlGaAs confining layers (CLs), and then fabricated the corresponding rolled-up InGaAs/GaAs QD microtubes by
conventional photolithography and wet-etching. Subsequently, the as-fabricated AlGaAs confined QD microtubes
were transferred to a Si-based SiOx substrate using a simple liquid-assisted substrate-on-substrate transfer
process, thus obtaining the microtube ...
Added: March 16, 2021
Nadtochiy A., Максимов М. В., Zhukov A., Письма в Журнал технической физики 2019 Т. 45 № 4 С. 42-45
The main characteristics of edge-emitting lasers with active regions based on nanoheterostructures
of a new type—quantum well-dots (QWDs) operating at various wavelengths—are compared. The QWD
structures operating at 980- and 1080-nm wavelengths demonstrated minimum values of threshold current
density (160 and 125 A/cm2), high internal quantum efficiency (74 and 85%), and low internal losses (1.1 and
0.9 cm–1), respectively. ...
Added: March 16, 2021
Zhukov A E, Optics Express 2018 Vol. 26 No. 11 P. 13985-13994
We report room temperature injection lasing in the yellow–orange
spectral range (599–605 nm) in (AlxGa1–x)0.5In0.5P–GaAs diodes with 4 layers of tensilestrained
InyGa1–yP quantum dot-like insertions. The wafers were grown by metal–organic
vapor phase epitaxy side-by-side on (811), (211) and (322) GaAs substrates tilted towards the
<111> direction with respect to the (100) surface. Four sheets of GaP-rich quantum barrier
insertions ...
Added: February 10, 2020
Жуков А. Е., СПб. : ПОЛИТЕХ-ПРЕСС, 2019
Пособие включает в себя учебные материалы по физике и технологии полупроводниковых квантовых точек и лазеров на основе квантовых точек, включая микролазеры. Квантовые точки – это новая разновидность полупроводниковых квантоворазмерных структур (наноструктур), в которых движение носителей заряда ограничено во всех трех направлениях. Возникающая в результате размерного квантования модификация плотности состояний, а также большая энергия локализации носителей ...
Added: February 10, 2020
Шерняков Ю. М., Гордеев Н. Ю., Паюсов А. С. et al., Физика и техника полупроводников 2021 Т. 55 № 3 С. 256-263
Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with ...
Added: April 19, 2021
Kryzhanovskaya N., Polubavkina Y., Moiseev E. et al., Journal of Applied Physics 2017 Vol. 121 No. 4 P. 043104
We present detailed studies of optically pumped InAs/InGaAs quantum dot based racetrack microlasers with 3.5-μm bend radius operating at room temperature. Q factor over 8000 and room temperature threshold power in the mW-range were achieved in the racetrack microlasers with straight section length ranging from 0 to 4 μm. A systematic investigation of the influence of the racetrack ...
Added: October 1, 2020
Lusche R., Semenov A., Il'in K. et al., IEEE Transactions on Applied Superconductivity 2013 Vol. 23 No. 3 P. 2200205-1-2200205-5
We present thorough measurements of the intrinsic detection efficiency in the wavelength range from 350 to 2500 nm for meander-type TaN and NbN superconducting nanowire single-photon detectors with different widths of the nanowire. The width varied from 70 nm to 130 nm. The open-beam configuration allowed us to accurately normalize measured spectra and to extract ...
Added: March 13, 2014
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020
Кривцов А. С., Морозов Н. В., Фирсова А. Д. et al., Доклады Академии наук 2003 Т. 391 № 6 С. 764-768
Существование однослойных нанотрубок, не нагруженных внутренним давлением, свидетельствует о необходимости учета моментного взаимодействия между атомами. В противном случае, слой атомов, формирующий нанотрубку, не имел бы изгибной жесткости, а стало быть, однослойная нанотрубка была бы неустойчива.
Ситуация здесь та же, что и в континуальной макромеханике. В основе таких популярных в инженерных расчетах континуальных моделей, как стержни и ...
Added: March 30, 2013
Kryzhanovskaya N., Мельниченко И. А., Букатин А. С. et al., Письма в Журнал технической физики 2021 Т. 47 № 19 С. 30-33
The dependence of the spectral position of the lasing line of a microdisk laser with InAs / InGaAs / GaAs
quantum dots on the refractive index of the aqueous solution, in which the microlaser is immersed.
For microlasers with a diameter of 10 μm placed in an aqueous solution of glucose, the maximum
the resonance shift is 9.4 nm ...
Added: October 11, 2021
Springer, 2022
The 9th International Symposium “Optics and its Applications” was held in Yerevan & Ashtarak, Armenia from January 15 to 19, 2022. This Symposium was dedicated to the Academician of the National Academy of Sciences (NAS) of
Armenia, Prof. Eduard Kazaryan, on the occasion of his 80th birthday. Therefore, it is not accidental that many of the ...
Added: November 7, 2022
Makhov I., Ivanov K., Moiseev E. et al., Nanomaterials 2023 Vol. 13 No. 5 Article 877
One-state and two-state lasing is investigated experimentally and through numerical simulation
as a function of temperature in microdisk lasers with Stranski–Krastanow InAs/InGaAs/GaAs
quantum dots. Near room temperature, the temperature-induced increment of the ground-state
threshold current density is relatively weak and can be described by a characteristic temperature
of about 150 K. At elevated temperatures, a faster (super-exponential) increase in ...
Added: April 25, 2023
Makhov I., Бекман А. А., Кулагина М. М. et al., Письма в Журнал технической физики 2022 Т. 48 № 12 С. 40-43
В широком диапазоне инжекционных токов исследованы спектральные зависимости интенсивности электролюминесценции микродискового лазера диаметром 31 μm с активной областью на основе квантовых точек InAs/InGaAs, работающего в непрерывном режиме генерации. Впервые в инжекционном микродисковом лазере продемонстрирована генерация одновременно через основное и возбужденное состояния квантовых точек при высоких уровнях накачки. При слабых уровнях накачки лазерная генерация протекает через ...
Added: July 5, 2022
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2021 Т. 55 № 9 С. 820-825
Gain saturation in a semiconductor optical amplifier
with an array of quantum dots was studied analytically and by
numerical simulation on the basis of an analysis of the rate
equations. It is shown that, at a moderate injection level, the
saturation power increases in proportion to the current density, and
then reaches its maximum value, limited by the rate of ...
Added: October 11, 2021