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Article

CALCULATION OF THE INFLUENCE OF SHUNT PARAMETERS ON THE DV/DT EFFECT IN POWER PHOTOTHYRISTORS

Микроэлектроника. 2018. Т. 47. № 7. С. 468-471.
Силкин Д. С., Падеров В. П.

The influence of the topological parameters of shunts in the cathode regions of a photothyristor on the dV/dt effect is calculated. The analytical condition that makes it possible to determine, in the first approximation, the region of the onset of the structure triggering caused by the dV/dt effect is obtained. When the forward voltage increases on the thyristor structure in the off state, the bias current flowing through the barrier capacitance of the inversely biased p-base-n-base junction causes a spontaneous triggering of the structure. This is the core of the dV/dt effect in thyristors