Article
Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 13 μm
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600 A/cm2600 A/cm2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320–1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength (𝑑𝜆/𝑑𝐼=0.1 nm/mAdλ/dI=0.1 nm/mA) and the low specific thermal resistance of 4×10−3°C×cm2/W4×10−3°C×cm2/W are demonstrated.
Studies of electronic transitions in the photoconverters with In0.4Ga0.6As quantum well-dots (QWD) layers have been carried out. It is shown that the quantum yield and electroluminescence spectral peaks are well described by e1-lh1 and e1-hh1 optical transitions in the quantum well with the same average composition and thickness. The energy of the optical transitions shifts toward longer wavelengths with an increase in the number of QWD layers. The calculated shifts of electron and hole levels due to the redistribution of elastic strain between In0.4Ga0.6As QWDs and GaAs spacer layers demonstrated a very good agreement with the experimental data.
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential efficiency of about 31%, and a peak electrical-to-optical power conversion efficiency of 15% in a 31 μm diameter microdisk laser. The continuous-wave lasing is observed up to 110°C.
Lasers based on semiconductor whispering gallery mode (WGM) resonators represent a perfect platform for active small footprint high-sensitive devices for biodetection. Biochemical samples typically require aqueous solution, and the resonator should be placed into a cuvette with water or in a microfluidic chip. The characteristics of modern semiconductor WGM lasers with an active region based on InAs/InGaAs quantum dots (QDs) make them promising for creating compact highly sensitive devices for biodetection. Deep localization of carriers in InAs/InGaAs QDs and suppressed lateral migration helps us to obtain room-temperature lasing in microdisk lasers immersed in an aqueous medium. In this work, we studied the sensitivity of the microdisk laser resonance spectral position to the refractive index of the surrounding material by changing the salinity of the water solution. We also successfully detected model proteins (secondary antibodies attached to the microdisk surface) via measurement of the lasing threshold power. The proteinprotein interaction on the microdisk surface manifests itself by an increase in the laser threshold power. Thus, in this work we demonstrated, for the first time, the possibility of using QD semiconductor microdisk lasers for detection of proteins in a microfluidic device.
Microdisk lasers having III-V core coated with TiO2 shell are studied under optical pumping. Initial core microdisk lasers with 5-10 µm diameter comprising five layers of InAs/In0.15Ga0.85As quantum dots demonstrate room temperature lasing with excellent characteristics at the ground state optical transition in the 1.28-1.30 µm spectral range. Deposition of the TiO2 dielectric shell results in a decimation of the whispering-gallery-modes of the microdisk resonator and, for thicker (> 100 nm) shells, in a blue shift of the lasing wavelength. Using numerical analysis we demonstrate that coating III-V core microdisk with high-index shell causes strong penetration of the 2nd and 3rd radial modes into the shell, whereas the 1 st radial mode remains nearly undisturbed. Though optical loss added by TiO2 dielectric shell are low (it does not exceed 2 cm-1 even for 250 nm-thick TiO2 layer), mode leakage to TiO2 results in decrease of the optical confinement factor and increase in the threshold pump power. This effect is more pronounced in microlasers of the smallest diameter studied (5 µm). Thus, beside other applications, TiO2 shell can be used for mode selection in microdisk lasers or for selective outcoupling of the emission to waveguide structure, which requires proper adjustment of the TiO2 shell thickness and microdisk diameter.
We show that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth. A maximum 3-dB modulation frequency of about 6 GHz was found. The K-limited maximal frequency of 13 GHz was estimated from the modulation response analysis. The experimental values of the energy-todata reaches 1.5 pJ/bit for the smallest diameter under study (10 μm). A 23 μm in diameter microlaser exhibits open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30ºC without temperature stabilization. Our results demonstrate the potential to achieve miniature high-speed on-chip light sources for optical communication applications using lasers with a diameter of only a few micrometers.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
Let G be a semisimple algebraic group whose decomposition into the product of simple components does not contain simple groups of type A, and P⊆G be a parabolic subgroup. Extending the results of Popov [7], we enumerate all triples (G, P, n) such that (a) there exists an open G-orbit on the multiple flag variety G/P × G/P × . . . × G/P (n factors), (b) the number of G-orbits on the multiple flag variety is finite.
I give the explicit formula for the (set-theoretical) system of Resultants of m+1 homogeneous polynomials in n+1 variables