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Regular version of the site

Article

Simulating the Self-Heating Effect for MOSFETs with Various Configurations of Buried Oxide

Russian Microelectronics. 2019. Vol. 48. No. 7. P. 467-469.
Translator: Y. Kornienko.

SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB SOI structure, and quasi-SOI structure. It is shown that, for a number of new designs, the
maximum temperature in the MOSFET structure is significantly reduced as compared to Тmax of the standard
SOI MOSFET structure; it approaches the values typical of standard MOSFETs on bulk silicon.