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Перовскитный солнечный элемент с дырочным транспортным слоем на основе комплекса полианилина
Письма в Журнал технической физики. 2019. Т. 45. № 16. С. 3-5.
Perovskite solar cells with photoactive layer of methylammonium lead iodide and hole transport layer based on a polyaniline complex with poly(2-acrylamido-2-methyl-1-propanesulfonic acid) have been developed for the first time. The power conversion efficiency of obtained cells is comparable with that of known analogs. Results of simulation of the optical parameters of cells in the framework of the Maxwell–Garnet model showed that the experimentally observed weak dependence of the power conversion efficiency on the perovskite layer thickness within 350–500 nm is related to the absence of significant variation of both the energy absorbed by the photoactive layer and the exciton generation rate.
Priority areas:
engineering science
Language:
Russian
Iakobson O. D., Gribkova O., Alexey R. Tameev et al., Journal of Industrial and Engineering Chemistry 2018 Vol. 65 P. 309-317
Composites based on graphene and water-dispersible polyaniline-poly(2-acrylamido-2-methyl-1-propanesulfonic acid) complex were shown as materials promising for the development of hole transporting layers (HTLs). By using multimodal atomic force microscopy, transmission electron microscopy, cyclic voltammetry and conductivity measurements, the relationship between the oxidation degree of graphene and the morphology, electrical conductivity and electron energy structure of HTLs was revealed. Utilizing the ...
Added: June 4, 2018
Liu D., Perez C. M., Vasenko A. et al., The Journal of Physical Chemistry Letters 2022 Vol. 13 No. 16 P. 3645-3651
Lead-free double perovskites hold promise for stable and environmentally benign solar cells; however, they exhibit low efficiencies because defects act as charge recombination centers. Identifying trap-assisted loss mechanisms and developing defect passivation strategies constitute an urgent goal. Applying unsupervised machine learning to density functional theory and nonadiabatic molecular dynamics, we demonstrate that negatively charged Br ...
Added: May 5, 2022
Mintairov S., Maximov M., Nadtochiy A. et al., Applied Physics Express 2020 Vol. 13 No. 1 Article 015009
Studies of electronic transitions in the photoconverters with In0.4Ga0.6As quantum well-dots (QWD) layers have been carried out. It is shown that the quantum yield and electroluminescence spectral peaks are well described by e1-lh1 and e1-hh1 optical transitions in the quantum well with the same average composition and thickness. The energy of the optical transitions shifts toward longer ...
Added: November 5, 2020
Gridchin V., Dvoretckaia L., Kotlyar K. et al., Nanomaterials 2022 Vol. 12 No. 14 Article 2341
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, the temperature–Ga/N2 flux ratio map was established for selective area epitaxy of GaN nanowires. It is shown that the growth selectivity for GaN nanowires without any parasitic growth on a silica mask can ...
Added: October 4, 2022
Yasnitsky L., Вестник Пермского университета. Серия: Математика. Механика. Информатика 2012 № 3(11) С. 73-79
Излагается точка зрения автора на некоторые приоритетные вопросы в области развития и применения метода конечных элементов. Излагается алгоритм применения метода конечных элементов с диагонализированными матрицами разрешающих СЛАУ в задачах термогравитационной конвекции жидкости. Приводится пример применения алгоритма для решения технической проблемы получения высококачественных стальных отливок методом математического моделирования. ...
Added: December 6, 2012
Li W., She Y., Andrey S. Vasenko et al., Nanoscale 2021 Vol. 13 No. 23 P. 10239-10265
Photoinduced nonequilibrium processes in nanoscale materials play key roles in photovoltaic and photocatalytic applications. This review summarizes recent theoretical investigations of excited state dynamics in metal halide perovskites (MHPs), carried out using a state-of-the-art methodology combining nonadiabatic molecular dynamics with real-time time-dependent density functional theory. The simulations allow one to study evolution of charge carriers ...
Added: June 18, 2021
Wu Y., Chu W., A.S. Vasenko et al., The Journal of Physical Chemistry Letters 2021 Vol. 12 P. 8699-8705
Lead-free metal halide perovskites are environmentally friendly and have favorable electro-optical properties; however, their efficiencies are significantly below the theoretical limit. Using ab initio nonadiabatic molecular dynamics, we show that common intrinsic defects accelerate nonradiative charge recombination in CsSnI3 without creating midgap traps. This is in contrast to Pb-based perovskites, in which many defects have ...
Added: September 8, 2021
Novikov L., Makletsov A. A., Sinolits V. V., IEEE Transactions on Plasma Science 2017 Vol. 45 No. 8 P. 1919-1922
Influence of electric field of charged spacecraft on secondary emission currents on the spacecraft surface is analyzed in terms of computation of secondary electron trajectories. Dependencies of the recollected electrons number on the electric field intensity at various distances from the emission point for standard secondary electron spectra are calculated. Criteria of the secondary electron ...
Added: January 24, 2018
Martynov Y., Nazmitdinov R., Moia-Pol A. et al., Physical Chemistry Chemical Physics 2017 Vol. 19 No. 30 P. 19916-19921
Organometal triiodide perovskites are promising, high-performance absorbers in solar cells. Considering the perovskite as a thin film absorber, we solve transport equations and analyse the efficiency of a simple heterojunction configuration as a function of electron–hole diffusion lengths. We found that for a thin film thickness of ~1 micron the maximum efficiency of ~31% could ...
Added: September 29, 2017
Shi R., A.S. Vasenko, Long R. et al., The Journal of Physical Chemistry Letters 2020 Vol. 11 No. 21 P. 9100-9109
The distribution of charge carriers in metal halide perovskites draws strong interest of the solar cell community, with experiments demonstrating that edges of various microstructures can improve material performance. This is rather surprising since edges and grain boundaries are often viewed as the main source of charge traps. We demonstrate by ab initio quantum dynamics ...
Added: October 6, 2020
Gridchin V., Kotlyar K., Reznik R. et al., Nanotechnology 2021 Vol. 32 No. 33 Article 335604
InGaN nanostructures are among the most promising candidates for visible solid-state lighting
and renewable energy sources. To date, there is still a lack of information about the influence of
the growth conditions on the physical properties of these nanostructures. Here, we extend the
study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam
epitaxy. The results ...
Added: August 30, 2021
Verbus V. A., Novikov A. V., Yurasov D. V. et al., Semiconductors 2018 Vol. 52 No. 11 P. 1442-1447
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically. This analysis indicates that, in order to attain the maximum tensile strain within a microbridge, the accumulation of strain in all corners of the ...
Added: December 26, 2018
ФГБНУ "НИИ ПМТ", 2019
Труды содержат представленные на конференцию доклады из вузовских, академических и отраслевых организаций России и стран СНГ (Армении, Азербайджана, Белоруссии, Казахстана, Узбекистана). В опубликованных докладах содержатся новые результаты исследований процессов образования, миграции и эволюции радиационных дефектов в твердых телах, радиационно-технологических методов модифицирования и обработки материалов с целью улучшения их эксплуатационных свойств, эффектов радиационно-стимулированной диффузии, радиационно-индуцированной сегрегации ...
Added: August 16, 2019
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
Budkov Y., М. : ЛЕНАНД, 2020
Within the presented monograph for the first time statistical approaches, based on the self-consistent field theory, were presented for the theoretical description of the thermodynamic properties of the ion-molecular systems (electrolyte solutions, ionic liquids, dielectric polymers and metal-organic frameworks) in the bulk solution and at the interfaces with the account for their molecular structure. In ...
Added: November 18, 2019
Балашова Е. В., Свинарев Ф. Б., Левин А. А. et al., Crystals 2019 Vol. 9 No. 11 P. 573
New single crystals, based on 2-methylbenzimidazole (MBI), of MBI-phosphite (C16H24N4O7P2), MBI-phosphate-1 (C16H24N4O9P2), and MBI-phosphate-2 (C8H16N2O9P2) were obtained by slow evaporation method from a mixture of alcohol solution of MBI crystals and water solution of phosphorous or phosphoric acids. Crystal structures and chemical compositions were determined by single crystal X-ray diffraction (XRD) analysis and confirmed by ...
Added: November 10, 2020
Babich E. S., Scherbak, S., Asonkeng F. et al., Optical Materials Express 2019 Vol. 9 No. 10 P. 4090-4096
The statistics of hot spots in the ensemble of self-assembled silver nanoislands grown
on the surface of silver-to-sodium ion exchanged glass under hydrogen annealing was studied.
The comparison of the surface enhanced Raman scattering (SERS) performance of the nanoisland
films at different growth stages with the developed model of the hot spots formation revealed that
at the nanoislands coalescence ...
Added: November 9, 2020
Blokhin S., Бобров М. А., Блохин А. А. et al., Физика и техника полупроводников 2019 Т. 53 № 8 С. 1128-1134
The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser ...
Added: December 9, 2020
Bondarenko G., Fisher M. R., Kristya V. I., Bulletin of the American Physical Society 2010 Vol. 55 No. 7 P. 50-50
In the paper simulation of electron, ion and metastable excited atom motion and interactions in a low-current discharge in argon-mercury mixture is fulfilled. Mixture ionization coefficient and the electric field strength have been calculated. ...
Added: May 13, 2013
Zhukov A., Kryzhanovskaya N., Moiseev E. et al., Физика и техника полупроводников 2020 Т. 54 № 6 С. 570-574
A model is developed that makes it possible to analytically determine the threshold current of a microdisk laser with consideration for its self-heating as a function of the ambient temperature and the microlaser diameter. It is shown that there exists a minimum microdisk diameter determined by self-heating, up to which continuous-wave lasing can be reached ...
Added: September 15, 2020
Иванов И., Красивская М. И., Лышов С. М. et al., Качество. Инновации. Образование 2015 № 12 С. 59-67
The paper describes block diagram of the prototype of information and measuring system on the base of technology NI RIO, which consists positioning table with the drives for operation of touch temperature sensor, dose for conductive paste, control module and specialized software, which is realized in the sphere of graphic programming NILabVIEW ...
Added: February 26, 2016
Малеев Н. А., Васильев А. П., Кузьменков А. Г. et al., Письма в Журнал технической физики 2019 Т. 45 № 21 С. 29-33
High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse ...
Added: December 8, 2020
Duarte E. C., Sardella E., Teixeira Saraiva T. et al., / Cornell University. Series cond-mat "arxiv.org". 2022. No. 2209.
The presence of magnetic fields and/or transport currents can cause penetration of vortices in superconductors. Their motion leads to dissipation and resistive state arises, which in turn strongly affects the performance of superconducting devices such as single-photon and single-electron detectors. Therefore, an understanding of the dissipation mechanisms in mesoscopic superconductors is not only of fundamental ...
Added: November 7, 2022
Свинарев Ф. Б., Балашова Е. В., Кричевцов Б. Б. et al., Journal of Physics: Conference Series 2018 Vol. 1038 P. 012117
The polarization switching was studied in single crystals and thin films of 2- methylbenzimidazole (MBI) obtained by evaporation method from an MBI ethanol solution. Dielectric hysteresis loops were measured in the temperature interval 290-390 K and frequency range 20-1000 Hz for different amplitudes of the electric field. The Kolmogorov β-model with account of Mertz law ...
Added: November 10, 2020