I-V- Characteristics Analysis of Betavoltaic Microbatteries Using TCAD Model
The complete analysis of I-V characteristics and set of basical parameters (Voc, Jsc, Idark, Pmax, η) for betavoltaic silicon batteries under Nickel-63 irradiation in temperature range 213-330 K is carried out using universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction diode energy converters with real Gaussian doping profiles are considered instead of devices with abrupt profiles which were used in all previous works. The simulated current-voltage characteristics of the 63Ni-Si betavoltaic elements are in good agreement with the measured characteristics in the whole of temperature range.