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Regular version of the site

Article

Low-temperature Hall effect in bismuth chalcogenides thin films

Physical Review B: Condensed Matter and Materials Physics. 2016. Vol. 94. No. 23. P. 235401-1-235401-8.
Kuntsevich A., Габдуллин А. А., Prudkogliad Valerii Andreevich, Селиванов Ю. Г., Чижевский Е. Г., Pudalov V.

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures, thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films ( with various carrier density, thickness, and carrier mobility), and by using a purely phenomenological approach, with no microscopic theory, we show that the low-temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with the diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.