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TCAD моделирование дозовых радиационных эффектов в суб-100 нм high-k МОП-транзисторных структурах
Известия высших учебных заведений. Электроника. 2017. Т. 22. № 6. С. 569-581.
Research target:
Electronics and Electrical Engineering
Priority areas:
engineering science
Language:
Russian
50584562, Popov D., L. M. Sambursky et al., Russian Microelectronics 2016 Vol. 45 No. 7 P. 460-463
The models of electrophysical effects built-into Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFETs with polysilicon gate oxide and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown ...
Added: March 2, 2017
Petrosyants K. O., Popov D., Russian Microelectronics 2019 Vol. 48 No. 7 P. 467-469
SOI MOSFETs have the worst properties of heat removal from an active region, which negatively
affects the reliability and efficiency of integrated circuits. Using TCAD modeling, we investigate the self-heating
effect in the following structures of deeply submicron MOSFETs with different configurations of buried
oxide: traditional bulk MOSFET, SOI structure, SELBOX structure, partial SOI structure, thin-BOX SOI
structure, UTBB ...
Added: March 24, 2020
50584562, Popov D., Bykov D., Russian Microelectronics 2018 Vol. 47 No. 7 P. 487-493
The sub-100-nm CMOS process with a high-κ gate dielectric is one of the key technologies for the
fabrication of digital, analog, and RF VLSI circuits and on-chip systems. The influence of ionizing radiation
on 45-nm MOS transistors with a high-κ dielectric fabricated using the bulk-silicon and SOI technologies is
simulated. Effects induced by the substitution of SiO2 with ...
Added: January 30, 2018
Konstantin O. Petrosyants, Popov D., , in : 2nd International Conference on Modeling Identification and Control. MIC 2015. Vol. 119.: P. : Atlantis Press, 2015. P. 174-176.
The models of electro-physical effects built-into Sentaurus TCAD have been tested. The models providing an adequate modeling of deep submicron high-k MOSFETs have been selected. The gate and drain leakage currents for 45 nm MOSFET with PolySi gate and SiO2, SiO2/HfO2 and HfO2 gate dielectrics have been calculated using TCAD. It has been shown that ...
Added: February 20, 2016
Petrosyants K. O., Kozhukhov M., Popov D., Наноиндустрия 2018 № 82 С. 404-405
The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data. ...
Added: January 30, 2019
Petrosyants K. O., Popov D., Kozhukhov M., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data. ...
Added: October 16, 2017
Petrosyants K. O., Popov D., В кн. : Труды XXV Международной конференции "Радиационная физика твердого тела" (Севастополь, 6-11 июля 2015г.). : М. : ФГБНУ "НИИ ПМТ", 2015. С. 424-431.
В работе рассмотрены физические модели Synopsys TCAD для моделирования МОП-транзисторов с high-k диэлектриком. В описание модели туннелирования и радиационной модели внесены изменения, позволившие достичь хорошей сходимости с экспериментальными данными. ...
Added: February 20, 2016
Petrosyants K. O., Popov D., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
TID response of 45nm high-k bulk and SOI MOSFETs was of simulated. The set of new physical semi-empirical models accounting for TID dependences trap densities, carrier mobilities, carrier lifetime was developed and introduced into TCAD. Acceptable agreement between simulated results and experimental data was achieved. ...
Added: October 16, 2017
Petrosyants K. O., Наноиндустрия 2018 № 82 С. 42-45
The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and ...
Added: January 30, 2019
Petrosyants K. O., Popov D., Известия высших учебных заведений. Электроника 2018 Т. 23 № 5 С. 521-525
КНИ МОП-транзисторы имеют худшие условия для отвода тепла из рабочей об-ласти, что негативно сказывается на надежности и производительности микро-схем. С помощью TCAD-моделирования исследован эффект саморазогрева в структурах КНИ МОП-транзистора с различной конфигурацией скрытого оксида: традиционная структура на объемном кремнии, структура кремний на изоляторе, структура с «окном» в скрытом оксиде (SELBOX), КНИ-структура с неполным скрытым оксидом ...
Added: October 22, 2018
Petrosyants K. O., Kozhukhov M., Popov D., В кн. : Международный форум "Микроэлектроника-2017" 3-я Международная научная конференция "Электронная компонентная база и электронные модули". Республика Крым, г. Алушта, 02-07 октября 2017 г. : М. : Техносфера, 2017. С. 344-347.
Разработана новая TCAD Rad модель для биполярных и МОП транзисторов, учитывающая влияние протонов на основные радиационно-зависимые параметры, такие как время жизни, подвижность, скорость поверхностной рекомбинации и концентрация радиационно-индуцированных ловушек в оксиде. Результаты моделирования показывают хорошую сходимость с экспериментальными данными. ...
Added: October 18, 2017
Petrosyants K. O., Kozhukhov M., Popov D., Sensors and Transducers 2018 Vol. 227 No. 11 P. 42-50
The special library of radiation damage models for physical parameters and electrical characteristics of bipolar and MOS transistor and sensor structures taking into account neutron, gamma and proton irradiation is developed and built-into Sentaurus Synopsys software tool. For different BJTs/HBTs, MOSFETs and radiation sensors the good agreement to simulated and experimental electrical characteristics is achieved. ...
Added: October 22, 2018
Petrosyants K. O., Popov D., Известия высших учебных заведений. Электроника 2013 № 4 С. 96-97
For the correct accounting of joint effects of radiation and temperature on characteristics of MOSFETs with the help of TCAD system the nonlinear correction coefficient which considers change of concentration of traps from temperature is entered into model of traps volume density in oxide. ...
Added: October 6, 2013
Петросянц К. О., Popov D., Самбурский Л. М. et al., Известия высших учебных заведений. Электроника 2015 Т. 20 № 1 С. 38-43
В статье с помощью расчёта в системе приборно-технологического моделирования TCAD проанализирована зависимость токов утечки транзисторной МОП-структуры размера 45 нм от внешних факторов. ...
Added: November 20, 2014
Petrosyants K. O., Popov D., Bykov D., Journal of Physics: Conference Series 2019 Vol. 1163 P. 1-6
Quasi-3D model for calculation of radiation leakage currents in modern submicron SOI MOSFET structures is proposed. Instead of the fully 3D modeling is proposed to solve two tasks: 2D modeling of the traditional MOSFET cross-section and 3D modeling of the side parasitic transistor. The radiation-induced leakage current simulation in the 0.35 μm SOI MOSFET structure with ...
Added: October 22, 2018
Petrosyants K. O., Kharitonov I. A., Sambursky L. M., Advanced Materials Research 2013 Vol. 718–720 P. 750-755
Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures ...
Added: January 23, 2014
Petrosyants K. O., Denis S. Silkin, Popov D., Micromachines 2022 Vol. 13 No. 8 Article 1293
A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30–7 nm FinFETs and NWFETs. The full set of output electrical device parameters Ion, ...
Added: October 30, 2022
Novikov L., Voronina E. N., Chirskaya N. P., Inorganic Materials: Applied Research 2014 Vol. 4 No. 2 P. 107-115
Features of formation and migration of radiation-induced defects in carbon nanotubes (CNT) and nanostructured materials are examined. The main methods and software tools used for the simulating nanomaterial structure and space factors are described. The results of mathematical simulation are presented. ...
Added: March 2, 2015
Jinshun B., Institute of Microelectronics of Chinese Academy of Sciences, 2017
Added: October 16, 2017
Petrosyants K. O., Kharitonov I. A., Pugachev A. et al., Journal of Physics: Conference Series 2019 Vol. 1353 No. 1 P. 1-7
The complete analysis of I-V characteristics and set of basical parameters (Voc, Jsc, Idark, Pmax, η) for betavoltaic silicon batteries under Nickel-63 irradiation in temperature range 213-330 K is carried out using universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction ...
Added: June 10, 2019
Petrosyants K. O., Kharitonov I. A., Kozhukhov M. et al., , in : 2017 International Workshop on Reliability of Micro- and Nano-Electronic Devices in Harsh Environment” (IWRMN-EDHE 2017). : Institute of Microelectronics of Chinese Academy of Sciences, 2017. P. 1-3.
An efficient approach to simulation of various types of radiation effects in bipolar and MOSFET IC’s using non-specialized SPICE simulators is realized using the developed compact SPICE models of Si BJT’s, SiGe HBT’s, SOI/SOS MOSFET’s and verified in real projects of extremal electronics R&D. ...
Added: October 16, 2017
Petrosyants K. O., Силкин Д. С., Popov D. et al., Известия высших учебных заведений. Электроника 2023 Т. 28 № 6 С. 826-837
С уменьшением размеров транзисторов возникают условия, когда удар одной частицы затрагивает сразу несколько транзисторов в составе ячейки памяти. Вследствие этого при моделировании недостаточно учитывать один транзистор, в который непосредственно попадает частица. В работе рассмотрена полноразмерная 3D-модель двух n-канальных транзисторов, являющихся частью 6T-ячейки памяти, в которую ударяет заряженная частица. Предложен способ моделирования удара частицы, который позволяет ...
Added: January 11, 2024
Petrosyants K. O., Kozhukhov M., Popov D., , in : 2019 IEEE 22nd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS). : Cluj : IEEE, 2019. P. 1-4.
A special RAD-THERM version of TCAD subsystem based on Sentaurus Synopsys platform taking into account different types of irradiation (gamma-rays, neutrons, electrons, protons, single events) and external/internal heating effects was developed and validated to forecast the results of natural experiments, and help the designer on with reliability guarantee. The radiation- and temperature-induced faults were modeled ...
Added: May 31, 2019
Petrosyants K. O., Popov D., , in : Proceedings of the 2nd International Conference on Microelectronic Devices and Technologies (MicDAT '2019). : Barcelona : International Frequency Sensor Association (IFSA), 2019. P. 24-28.
In this work self-heating effect in SOI MOSFETs with various configuration of buried oxide was investigated using TCAD modeling. The basically electro-thermal transport model built-in to Sentaurus Synopsys tool was complemented by the set of new models for the temperature-dependent physical parameters: thermal conductivities λSi(T), λSiO2(T); oxide and trapped charge densities Nox(T), Nit(T) and others ...
Added: June 4, 2019