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Article

Измерения электрических характеристик биполярных и МОП-транзисторов под действием радиации

Измерительная техника. 2016. № 10. С. 55-60.

In this paper we analyze details of bipolar transistors and MOSFETs electrical characteristics measurement in the presence of neutron, electron and gamma irradiation. An automated measurement subsystem is developed with its core being a measurement kernel comprising a set of measurement instrumentation as well as methods of measurement and data processing for irradiated transistors of various types. Provided are several examples of the subsystem application to BJTs and MOSFETs radiation hardness investigation as well as extraction of their SPICE model parameters for circuit design.