Nonlinear generation of vorticity in thin smectic films
We analyze a solenoidal motion in a vertically vibrated freely suspended thin smectic film. We demonstrate analytically that transverse oscillations of the film generate two-dimensional vortices in the plane of the film owing to hydrodynamic nonlinearity. An explicit expression for the vorticity of the in-plane film motion in terms of the film displacement is obtained. The air around the film is proven to play a crucial role, since it changes the dispersion relation of transverse oscillations and transmits viscous stresses to the film, modifying its bending motion. We propose possible experimental observations enabling to check our predictions.
Special features of sputtering of the cathode with a thin dielectric film of variable thickness in a glow discharge are studied. It is shown that the flux density of atoms sputtered from the cathode is maximal on its sections with minimal film thickness due to focusing of ion flux caused by the violation of the electric field uniformity near the cathode surface. As a result, the non-uniformity of the film thickness increases with time, thereby leading to the formation of pores in the film.
Dielectric films and siliconinsulator interfaces in metalinsulatorsemiconductor (MIS) structures are modified using injectionthermal treatment, which involves highfield injection of a specified charge into the gate dielectric and subsequent annealing of the structure. The effect of the injectionthermal treatment modes on the MIS structure modification is investigated. The injectionthermal treatment is shown to reduce imperfection of the dielectric films and, thus, enhance reliability of the MIS devices. It is established that the MIS structure modification processes occurring at the injectionthermal treatment are largely identical to those occurring at the radiation thermal treatment; therefore, for certain MIS devices, the radiation thermal treatment can be replaced by the injectionthermal one.
It has been shown that the increase of charge stability of MDS-systems can be achieved by optimal choosing the thickness of dielectric films of silicon dioxide and phosphorous soda-lime glass.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.