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Regular version of the site

Article

Temperature-dependent nonlinear Hall effect in macroscopic Si-MOS antidot array

Kuntsevich A., Shupletsov A., Nunuparov M.

By measuring magnetoresistance and the Hall effect in a classically moderate perpendicular magnetic field in a Si-MOSFET-type macroscopic antidot array, we found a nonlinear with field, temperature- and density-dependent Hall resistivity. We argue that this nonlinearity originates from low mobility shells of the antidots with a strong temperature dependence of the resistivity and suggest a qualitative explanation of the phenomenon.