Temperature-dependent nonlinear Hall effect in macroscopic Si-MOS antidot array
By measuring magnetoresistance and the Hall effect in a classically moderate perpendicular magnetic field in a Si-MOSFET-type macroscopic antidot array, we found a nonlinear with field, temperature- and density-dependent Hall resistivity. We argue that this nonlinearity originates from low mobility shells of the antidots with a strong temperature dependence of the resistivity and suggest a qualitative explanation of the phenomenon.
The characteristics modification of the MOS devices with thermal silicon dioxide, passivated by phosphorus-silicate glass (PSG) layer by Fowler-Nordheim (FN) tunneling electron injection in high-fields is studied. The DC high-field tunneling injection from silicon and metal was used for charge state modification of MOS structure gate dielectric. The parameters characterizing the charge state change of MOS structures during modification had been monitored using time dependence of voltage change VI applied to a sample during the injection. It was found out that the range of threshold voltage changes of MOS devices after electron injection could reach values up to 6 V. The range increases with growth of phosphorus concentration in PSG layer. However, the value of the injected charge has to be less than 0.1 mC/cm2 during the adjustment of the threshold voltage in order to provide acceptable values of surface state density.
The collection presents abstracts included in the program "38 Meetings on low temperature physics". The sequence of abstracts corresponds to the sequence in which the reports are placed in the program of the Meeting.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
Let k be a field of characteristic zero, let G be a connected reductive algebraic group over k and let g be its Lie algebra. Let k(G), respectively, k(g), be the field of k- rational functions on G, respectively, g. The conjugation action of G on itself induces the adjoint action of G on g. We investigate the question whether or not the field extensions k(G)/k(G)^G and k(g)/k(g)^G are purely transcendental. We show that the answer is the same for k(G)/k(G)^G and k(g)/k(g)^G, and reduce the problem to the case where G is simple. For simple groups we show that the answer is positive if G is split of type A_n or C_n, and negative for groups of other types, except possibly G_2. A key ingredient in the proof of the negative result is a recent formula for the unramified Brauer group of a homogeneous space with connected stabilizers. As a byproduct of our investigation we give an affirmative answer to a question of Grothendieck about the existence of a rational section of the categorical quotient morphism for the conjugating action of G on itself.
Let G be a connected semisimple algebraic group over an algebraically closed field k. In 1965 Steinberg proved that if G is simply connected, then in G there exists a closed irreducible cross-section of the set of closures of regular conjugacy classes. We prove that in arbitrary G such a cross-section exists if and only if the universal covering isogeny Ĝ → G is bijective; this answers Grothendieck's question cited in the epigraph. In particular, for char k = 0, the converse to Steinberg's theorem holds. The existence of a cross-section in G implies, at least for char k = 0, that the algebra k[G]G of class functions on G is generated by rk G elements. We describe, for arbitrary G, a minimal generating set of k[G]G and that of the representation ring of G and answer two Grothendieck's questions on constructing generating sets of k[G]G. We prove the existence of a rational (i.e., local) section of the quotient morphism for arbitrary G and the existence of a rational cross-section in G (for char k = 0, this has been proved earlier); this answers the other question cited in the epigraph. We also prove that the existence of a rational section is equivalent to the existence of a rational W-equivariant map T- - - >G/T where T is a maximal torus of G and W the Weyl group.