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Article

IV-Characteristics Measurement Error Resulting from Long Cables for Irradiated Bipolar Junction Transistors

Advanced Materials Research. 2015. Vol. 1083. P. 185-189.

I-V-characteristics of an irradiated transistor in many cases should be measured inside the radiation chamber with long cables, which introduces noticeable measurement error. In this paper I-V-characteristics of an irradiated bipolar junction transistor measured with the 4-wire and the 2- wire circuits are presented and compared to direct (without cables) measurements. Significant enlargement of measurement error for the 2-wire method in comparison with the 4-wire method is shown for different currents.