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Regular version of the site

Article

Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer

Physical Review B: Condensed Matter and Materials Physics. 2014. Vol. 90. No. 16. P. 165430.
Fedorov A. K., Kurbakov I. L., Yu. E. Lozovik.

The formation of the roton-maxon excitation spectrum and the roton instability effect for a weakly correlated Bose gas of dipolar excitons in a semiconductor layer are predicted. The stability diagram is calculated. According to our numerical estimations, the threshold of the roton instability for Bose-Einstein condensed exciton gas with roton-maxon spectrum is achievable experimentally, e.g., in GaAs semiconductor layers.