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Modification of gate dielectric in MOS devices by injection-thermal and plasma treatments
The inuence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) lm in the structures with the two-layer gate dielectric SiO2-PSG under high-eld FowlerNordheim electron injection can be used for the characteristics modication of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are oered to use for improving the reliability and nding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric lms of MOS-structures due to structural changes in the SiO2 lm and Si-SiO2 interface.