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September 17, 2026
'I Wish That People Would Place Greater Trust in Science'
When Tatiana Eremicheva chose Fundamental and Computational Linguistics as her field of study, she thought it would be about learning languages. Instead, she discovered it was about helping people. In this interview for the HSE Young Scientists project, she discusses science as a way of understanding the world, billiards as a team-building activity, and why learning to read is not always as easy as it seems.
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Modulation of charge transport and rectification behavior in CsSnI3 thin films through A-site cation engineering

Applied Physics Letters. 2025. Vol. 126. No. 26. Article 262106.
Zarudnyaya A., Segal G., Morozov A., Luchnikov L., Yurchuk S., Aleksandrov A., Sayarov I., Tameev A., Rabinovich O., Schemerov I., Gostishchev P., Saranin D.

CsSnI3 perovskite is a thin-film semiconductor with high intrinsic conductivity for various device applications (thermoelectric, photovoltaics, etc.). Stoichiometric CsSnI3 has high-density defects and structural imperfections affecting device performance. In this work, we made an investigation on A-site cation engineering to evaluate the correlation between structural and transport parameters for effective operation in rectifying devices. Here, we analyzed CsSnI3 thin films modified with methylamine (MA), formamidine (FA), guanidine (GuA), and 5-ammonium valeric acid (AVA) cations, correlating structural parameters obtained by Rietveld refinement with their optoelectronic and diode characteristics. MA-, FA-, and GuA-substituted films exhibited low sheet resistance (~450–2200 Ohm/sq); however, strain-induced lattice distortions and accumulated defects in GuA-substituted films significantly hindered effective charge collection and increased recombination losses. AVA substitution formed low-conductivity 2D interlayers, increasing resistance (>10^5 Ohm/sq) and altering transient response characteristics, yet provided minimal reverse switching losses (~100 mW/cm2), beneficial for high-frequency applications. FA substitution emerged as optimal, balancing structural stability, conductivity, minimal defects, and relevant diode properties. The obtained results highlight that targeted lattice modifications strongly influence the practical performance of rectifying p–i–n diodes based on CsSnI3.

Research target: Physics Materials Technologies
Language: English
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Keywords: транспорт носителей зарядавольт-амперная характеристикаp-i-n-фотодиодыvoltage-current characteristicsперовскитыPerovskitesP-i-n photodiode charge carrier transport
Publication based on the results of:
Advanced materials and technologies (2025)
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