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Высокоразрешающая рентгеновская дифрактометрия кристаллов кремния, облученных протонами
We have studied the transformation of radiation defects generated by implantation of protons in the crystals of n-type silicon with a resistivity of 100 Om.sm. The measurements were conducted using high-definition X-ray diffraction (HDD). It is shown that sequential implantation of protons with energies of 100 +200 +300 keV and a fluence of 2 .1016sm-2 results in the formation of a damaged layer with an increased lattice parameter and thickness 2.4 mm. It is formed by radiation-induced defects both of the vacancy and interstitial types. The annealing of the irradiated crystals under vacuum at a temperature of 600 ° C evolves radiation-induced defects, while reducing their number. After annealing at 1100° C prevail interstitial type defects.
Keywords Silicon, H+ implantation, Annealing, High-definition X-ray difractometry