Получено аналитическое решение уравнения нестационарного двумерного распределения температуры в объеме цилиндрического электрода с катодным пятном на его торце после зажигания нормального тлеющего разряда. Решена система уравнений, связывающая среднюю температуру поверхности электрода в катодном пятне, устанавливающуюся после достаточно большого времени горения разряда, с параметрами катодного слоя разряда, и найдена зависимость ее величины от времени, учитывающая влияние нагрева газа у пятна на его размер.
Diffusion transport of material sputtered from the surface of the powered electrode in the asymmetric alternating current discharge is theoretically studied. It is shown that amplitudes of the non-stationary component of the sputtered atom (SA) flow densities at the electrodes depend on the discharge frequency and two dimensionless parameters, which are functions of the SA mass, its mean free path length in the background gas and the distance between the electrodes. It is found that diffusion damping of the time-varying component of the SA number density takes place in the discharge volume under certain conditions and their flows at the electrodes can be considered as time-independent.
A two-dimensional model of a sintered electrode activator (in particular, barium) transport in the arc discharge lamp tube volume, based on numerical solution of the non-stationary diffusion equation, is developed. The dependence of the barium atoms flow density at the electrode rod tip on fill gas pressure and electrode dimensions is investigated. It is found that the main mechanism of their transport to the rod tip is evaporation from the sintered mass surface and diffusion through the gas. Evolution of tungsten rod emission characteristics caused by deposition of the evaporated material at its surface is experimentally studied.
The characteristics modification of the MOS devices with thermal silicon dioxide, passivated by phosphorus-silicate glass (PSG) layer by Fowler-Nordheim (FN) tunneling electron injection in high-fields is studied. The DC high-field tunneling injection from silicon and metal was used for charge state modification of MOS structure gate dielectric. The parameters characterizing the charge state change of MOS structures during modification had been monitored using time dependence of voltage change VI applied to a sample during the injection. It was found out that the range of threshold voltage changes of MOS devices after electron injection could reach values up to 6 V. The range increases with growth of phosphorus concentration in PSG layer. However, the value of the injected charge has to be less than 0.1 mC/cm2 during the adjustment of the threshold voltage in order to provide acceptable values of surface state density.
A one-dimensional model kinetic equation for the energy distribution function of heavy ions in the cathode sheath of gas mixture glow dischargees is siggested.