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Найдено 9 публикаций
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Статья
Priezjev N. Computational Materials Science. 2019. Vol. 168. P. 125-130.
Добавлено: 2 мая 2019
Статья
Popov A., Lebedeva I., Knizhnik A. et al. Computational Materials Science. 2014. Vol. 92. P. 84-91.
Добавлено: 17 октября 2016
Статья
Priezjev N. Computational Materials Science. 2018. Vol. 153. P. 235-240.
Добавлено: 20 апреля 2018
Статья
Priezjev N., Makeev M. Computational Materials Science. 2018. Vol. 150. P. 134-143.
Добавлено: 2 апреля 2018
Статья
Priezjev N., Makeev M. Computational Materials Science. 2019. Vol. 156. P. 376-384.
Добавлено: 14 августа 2018
Статья
Priezjev N., Liu Q. Computational Materials Science. 2019. Vol. 161. P. 93-98.
Добавлено: 6 ноября 2018
Статья
Priezjev N. Computational Materials Science. 2018. Vol. 150. P. 162-168.
Добавлено: 26 марта 2018
Статья
Lebedeva I. V., Popov A. M., Knizhnik A. A. et al. Computational Materials Science. 2015. Vol. 109. P. 240-247.

The telescopic contact between graphene layers with a dielectric spacer is considered as a new type of graphene-based nanoelectronic devices. The tunneling current through the contacts with and without an argon spacer is calculated as a function of the overlap length, stacking of the graphene layers and voltage applied using non-equilibrium Green function formalism. A negative differential resistance (similar to semiconductor tunnel diode) is found with the peak to valley ratio up to 10 and up to 2 for the contacts without any spacer and with the argon spacer, respectively. The capacitance of the contacts between the graphene layers with the argon spacer is calculated as a function of temperature taking into account the quantum contribution. The related RC time constant is estimated to be about 3 ps, which allows elaboration of fast-response nanoelectronic devices. The possibility of application of the contacts as memory cells is discussed.

Добавлено: 22 октября 2015
Статья
Bhattarai B., Priezjev N. Computational Materials Science. 2018. Vol. 143. P. 497-504.
Добавлено: 6 декабря 2017