Physical TCAD model for proton radiation effects in SiGe HBTs
Performance degradation of the SiGe HBT after proton irradiation is investigated using a new physical TCAD model built into the Synopsys Sentaurus tool. The general conception of the model is based on the additive effects of ionization and displacement effects influence on transistor base current. New equations for the physical parameters τ, S, Nit taking into account radiation effects after the impact of proton irradiation are included in the program. Comparison of simulated and experimental characteristics of the SiGe HBT after subjection to proton fluences up to 5 1013p/cm2 shows the 10-20% error.