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Nonstationary distributions and relaxation times in a stochastic model of memristor
We propose a stochastic model for a memristive system by
generalizing known approaches and experimental results. We validate our
theoretical model by experiments carried out on a memristive device based
on Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti multilayer structure. In the framework
of the proposed model we obtain the exact analytic expressions for stationary
and nonstationary solutions. We analyze the equilibrium and non-equilibrium
steady-state distributions of the internal state variable of the memristive system
and study the influence of fluctuations on the resistive switching, including the
relaxation time to the steady-state. The relaxation time shows a nonmonotonic
dependence, with a minimum, on the intensity of the fluctuations. This paves
the way for using the intensity of fluctuations as a control parameter for
switching dynamics in memristive devices.