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Stochastic model of memristor based on the length of conductive region

Chaos, Solitons and Fractals. 2021. Vol. 150. Article 111131.
Agudov N. V., Dubkov A. A., Safonov A. V., Krichigin A. V., Kharcheva A., Guseinov D. V., Koryazhkina M. N., Novikov A. S., Shishmakova V. A., Antonov I. N., Carollo A., Spagnolo B.

We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the
properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in
memristors. The proposed model is described by rather simple equations of Brownian diffusion, does
not require significant computational resources for numerical modeling, and allows obtaining the exact
analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system,
by finding a quite good qualitatively agreement between theory and experiment. Based on the proposed
model, the mathematical apparatus of Markov processes for the first passage time of the boundaries can
be used to analyse the temporal characteristics of resistive switching.

Research target: Physics
Language: English
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DOI
Text on another site
Keywords: memristorstochasticityresistive switching
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