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ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding
Apertureless SNOM mapping of slightly-doped 4H-SiC epitaxial layer grown on a heavily-doped 4H-SiC substrate was performed in a cleaved edge geometry. Surface phonon polariton waves excited by an external coherent light were observed on a sample surface which contains such an epilayer-defined strip near its edge. The light frequency was tuned close to the lattice resonance. Due to a low doping level in an epilayer, its electromagnetic response is determined mainly by the SiC lattice resonance. The rest of a sample surface corresponds to a substrate, whose electromagnetic response is determined mainly by the free carriers, so that phonon-polariton phenomena get suppressed. Such an epilayer-defined strip (vanishing at $895~cm^{-1}$ frequency) becomes more pronounced at $920~cm^{-1}$ and finally the excited state gets completely confined within such a strip ($938~cm^{-1}$), due to the differences in the electromagnetic properties of doped and undoped SiC.