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Chalcogenide Glassy Semiconductors: History of Discovery and Research
P. 107–123.
Tsendin K., Bogoslovskiy N.
In book
Vol. 1: Structure, Properties, Modeling and Applications of Amorphous Chalcogenides. , World Scientific Publishing Co. Pte. Ltd, 2021.
Chertopolokhov V., Mukhamedov A., Bugriy G. et al., IEEE Access 2026 Vol. 14 P. 14369–14392
This study presents on-the-fly identification and multi-step prediction of nonlinear systems with delayed inputs using a dynamic neural network combined with a smooth projection onto ellipsoids. The projection enforces parameter constraints that guarantee stability, while a Lyapunov–Krasovskii analysis yields computable ultimate error bounds. Riccati-type matrix inequalities are derived, providing an efficient vectorization–projection–devectorization implementation suitable for ...
Added: May 22, 2026
Maslov D., Vladimir I. Yudson, Batista C., Physical Review Letters 2025 Vol. 135 No. 3 Article 036301
We investigate resistive anomalies in metals near a ferromagnetic phase transition, emphasizing the role of long-range critical fluctuations. Our analysis shows that electron diffusion near the critical temperature Tc enhances the singular behavior of resistivity via a classical memory effect, exceeding the prediction of Fisher and Langer [Phys. Rev. Lett. 20, 665 (1968)]. Close to ...
Added: September 11, 2025
S. A. Fefelov, Kazakova L. P., N. A. Bogoslovskiy et al., Journal of Physics: Conference Series 2021 Vol. 2103 No. 114 Article 012087
The current-voltage characteristics of Ge2Sb2Te5 thin films were measured by a sequence of triangular current pulses with an increasing maximum current. Each current pulse forms in the sample a conducting filament with an area proportional to the maximum current in the recording pulse. ...
Added: November 8, 2022
Фефелов С. А., Казакова Л. П., Bogoslovskiy N. A. et al., Известия Санкт-Петербургской лесотехнической академии 2022 Т. 238 С. 228–242
В последнее время большое внимание направлено на разработку новых типов энергонезависимой памяти. Одним из наиболее перспективных материалов для решения этой задачи являются халькогенидные полупроводники (ХСП) состава Ge2Sb2Te5 (GST225), обладающие фазовой памятью, которая основана на фазовом переходе вещества из аморфного состояния в кристаллическое (эффект памяти) под воздействием электрического поля [Ovshinsky, 1968; Yamada et al., 1991]. В ...
Added: November 8, 2022
Фефелов С. А., Казакова Л. П., Bogoslovskiy N. A. et al., Физика и техника полупроводников 2020 Т. 54 № 4 С. 372–375
The current–voltage characteristics measured on Ge2Sb2Te5 thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can be associated with memory-channel expansion. The memory-channel size is estimated. It is concluded that Ge2Sb2Te5 films can be used ...
Added: November 11, 2020
Фефелов С. А., Казакова Л. П., Bogoslovskiy N. A. et al., Физика и техника полупроводников 2018 Т. 52 № 12 С. 1503–1506
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. ...
Added: November 11, 2020
Pozhidaev E. D., Shaposhnikova V., Alexey R. Tameev et al., Polymers 2020 Vol. 12 No. 00013 P. 1–9
Abstract: Electrical properties of the thin films of poly(arylene ether ketone) copolymers (co-PAEKs)
with the fraction of phthalide-containing units of 3, 5 and 50 mol% in the main chain were
investigated by using radiation induced conductivity (RIC) measurements. Transient current
signals and current-voltage (I-V) characteristics were obtained under exposing 20÷25 thick films of
the co-PAEKs to monoenergetic electron pulses ...
Added: November 20, 2019