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May 15, 2026
Preserving Rationality in a Period of Turbulence
The HSE International Laboratory for Logic, Linguistics and Formal Philosophy studies logic and rationality in a transformed world characterised by a diversity of logical systems and rational agents. The laboratory supports and develops academic ties with Russian and international partners. The HSE News Service spoke with the head of the laboratory, Prof. Elena Dragalina-Chernaya, about its work.
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Ilya Venediktov graduated from the Master’s programme at the HSE Tikhonov Moscow Institute of Electronics and Mathematics through the combined Master’s–PhD track and is currently studying at the HSE Doctoral School of Engineering Sciences. At present, he is undertaking a long-term research internship at the University of Science and Technology of China in Hefei, where he is preparing his dissertation. In this interview, he explains how an internship differs from an academic mobility programme, discusses his research topic, and describes the daily life of a Russian doctoral student in China.
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On the Accuracy of Conductance Quantization in Spin-Hall Insulators

JETP Letters. 2019. Vol. 109. No. 2. P. 92–95.
Konyzheva S. K., E.S. Tikhonov, V.S. Khrapai

In contrast to the case of ordinary quantum Hall effect, the resistance of ballistic helical edge channels in typical quantum spin-Hall experiments is non-vanishing, additive and poorly quantized. Here we present a simple argument connecting this qualitative difference with a spin relaxation in the current/voltage leads in an experimentally relevant multi-terminal bar geometry. Both the finite lead resistance and the spin relaxation contribute to a non-vanishing four-terminal edge resistance, explaining poor quantization quality. We show that corrections to the four-terminal and two-terminal resistances in the limit of strong spin relaxation are opposite in sign, making a measurement of the spin relaxation resistance feasible, and estimate the magnitude of the effect in HgTe-based quantum wells.

Language: English
DOI
Keywords: topological insulatorquantum transport
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