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  • Фотоэмиссия неравновесных носителей заряда в высокоомный полупроводник при локальном освещении
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News
October 1, 2026
HSE Researchers Show How Congenital Motor Disorders Affect Brain Development
Researchers from HSE University’s Institute for Cognitive Neuroscience have synthesised the findings of their previous studies on brain development in children with obstetric brachial plexus palsy and arthrogryposis. Their analysis shows that impaired motor function in early childhood not only limits children’s motor experience but also affects memory, categorical thinking, and information processing. The study has been published in Frontiers in Psychology.
October 1, 2026
Window into the Body: Scientists Develop Neural Network to Detect Risk of 15 Diseases from Retinal Images
Russian universities, with the participation of HSE University, Sber, and Z-union, have developed a neural network that can simultaneously assess the risk of 15 types of pathology from retinal photographs, including not only eye diseases but also cardiovascular conditions. The AI system can help clinicians detect potentially concerning changes at an early stage, identify signs reflecting the condition of retinal blood vessels, and determine whether a patient may need further examination. The paper has been published in Frontiers in Medicine.
September 30, 2026
'We Did Not Limit the Time for Questions'
The International Laboratory for Supercomputer Atomistic Modelling and Multi-Scale Analysis at HSE University held a major conference on molecular dynamics. Participants had the opportunity to attend all the presentations, while speakers were given as much time as they needed to answer questions. The HSE News Service interviewed Grigory Smirnov, Head of the Laboratory, and Genri Norman, Chief Research Fellow, about the conference preparations and the discussions it generated.

 

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Фотоэмиссия неравновесных носителей заряда в высокоомный полупроводник при локальном освещении

С. 195–199.
Lysenko A. P., Golubiatnikov V. A., Grigoryev F. I., Strogankova N. I., Белов А. Г.

The photoemission of excess charge carriers into high-ohmic gallium arsenide was investigated. It was revealed, that the illumination even small local sample areas located far from contacts, influences both on contacts transition resistance and on volume conductivity of the crystal. On Suite-voltage dependencies there is a linear plot, angular coefficient which is directly proportional to the diameter of the illuminated surface. The model qualitatively explain the experimental results.

Language: Russian
Full text
Keywords: проводимостьconductivityhigh-resistivity semiconductorsphotoemission of carrierslux-ampere characteristicsвысокоомные полупроводникифотоэмиссия носителей зарядалюкс-амперные характеристики

In book

XXI научно-техническая конференция с участием зарубежных специалистов "Вакуумная наука и техника"
М.: МИЭМ НИУ ВШЭ, 2014.
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