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  • Фотоэмиссия неравновесных носителей заряда в высокоомный полупроводник при локальном освещении
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Subject
News
May 22, 2026
HSE Graduates AI Project Wins at TECH & AI Awards
Daria Davydova, graduate of the HSE Graduate School of Business and Head of the AI Implementation Unit at the Artificial Intelligence Department of Alfa-Bank, received a prize at the TECH & AI Awards. She was awarded for the best AI solution for optimising business processes. The winners were determined as part of the VII Russian Summit and Awards on Digital Transformation (CDO/CDTO Summit & Awards).
May 20, 2026
HSE University Opens First Representative Office of Satellite Laboratory in Brazil
HSE University-St Petersburg opened a representative office of the Satellite Laboratory on Social Entrepreneurship at the University of Campinas in Brazil. The platform is going to unite research and educational projects in the spheres of sustainable development, communications and social innovations.
May 18, 2026
The 'Second Shift' Is Not Why Women Avoid News
Women are more likely than men to avoid political and economic news, but the reasons for this behaviour are linked less to structural inequality or family-related stress than to personal attitudes and the emotional perception of news content. This conclusion was reached by HSE researchers after analysing data from a large-scale survey of more than 10,000 residents across 61 regions of Russia. The study findings have been published in Woman in Russian Society.

 

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Фотоэмиссия неравновесных носителей заряда в высокоомный полупроводник при локальном освещении

С. 195–199.
Lysenko A. P., Golubiatnikov V. A., Grigoryev F. I., Strogankova N. I., Белов А. Г.

The photoemission of excess charge carriers into high-ohmic gallium arsenide was investigated. It was revealed, that the illumination even small local sample areas located far from contacts, influences both on contacts transition resistance and on volume conductivity of the crystal. On Suite-voltage dependencies there is a linear plot, angular coefficient which is directly proportional to the diameter of the illuminated surface. The model qualitatively explain the experimental results.

Language: Russian
Full text
Keywords: проводимостьconductivityhigh-resistivity semiconductorsphotoemission of carrierslux-ampere characteristicsвысокоомные полупроводникифотоэмиссия носителей зарядалюкс-амперные характеристики

In book

XXI научно-техническая конференция с участием зарубежных специалистов "Вакуумная наука и техника"
М.: МИЭМ НИУ ВШЭ, 2014.
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