Method of metal-insulator-semiconductor structure interface analysis

Surface and Interface Analysis. 1999. Vol. 28. No. 1. P. 142–145.

Andreev V. V., Bondarenko G.G., Loskutov S. A., Stolyarov A. A.

An injection technique for testing and studying the charge degradation in MIS structures has been proposed. This technique allows: (1) measurement of the change in the charge state of the MIS structures and the production of charge injection into the dielectric using the same technique; (2) evaluation of the effective charge of the dielectric, the interface state density, the flat band voltage, the surface potential value for a given bias, the poten­tial barrier height on the injection interface and the dielectric capacitance; (3) determination of the variations of the voltage, depending on the injected charge, the concentration of the charge traps and their capture cross-sections, of the value of the charge injected into the dielectric until sample breakdown occurs and location of the charge centroid in the dielectric.

Keywords: метод, method, metal-insulator-semiconductor structure, interface analysis, структура "металл-диэлектрик-полупроводник", анализ границ раздела