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Regular version of the site

Book chapter

Strain-engineered Ge embedded into microresonators as an active media for Si photonics

P. 1-2.
Yurasov D., Gusev N., Dyakov S., Nezhdanov A., Novokov A., Skorokhodov E., Verbus V. A., Yablonskiy A., Krasilnik Z.

Optical properties of tensile strained n-doped Ge microstructures were investigated. Formation of microresonators based on Bragg reflectors and photonic crystals were implemented for such kind of active medium and opportunities to employ them for fabrication of efficient Si-compatible light sources were discussed.