Исследование моделей безотказности ламп бегущей волны для широкополосных усилителей связи
The considered model of the failure rate of CMOS VHSIC design proposed in the article Piskun G.A., Alekseev V.F., "Improvement of mathematical models calculating of CMOS VLSIC taking into account features of impact of electrostatic discharge", published in the first issue of the journal "Technologies of electromagnetic compatibility" for the year 2016. It is shown that the authors claim that this model "...will more accurately assess the reliability of CMOS VHSIC design" is fundamentally flawed and its application will inevitably lead to inadequate results. Alternatively, the proposed model of the failure rate of CMOS VHSIC design, which also allows to take into account the views of ESD, but based on the use of resistance characteristics of CMOS VHSIC to the effects of ESD.
In this study with using of the small-signal theory of discrete electron-wave interaction in the passbands and stopbands resonator slow-wave systems (SWS) of power traveling-wave tubes (TWT), obtain the characteristic equation for the propagation constants of the 4-electron waves produced in the interaction of the electron beam forward and backward electromagnetic waves of SWS. The analysis of solutions of this equation, which allowed to establish the specific characteristics of these waves are compared with the known properties of electron waves in a "smooth", such as helical SWS. On the basis of solving the boundary value problem for the SWS segments were simulated and found gain of multisection TWT with transparent section and stopsection, as well as, the distribution of fields and currents along the stopsection.