Фотоэмиссия неравновесных носителей заряда в высокоомный полупроводник при локальном освещении
The photoemission of excess charge carriers into high-ohmic gallium arsenide was investigated. It was revealed, that the illumination even small local sample areas located far from contacts, influences both on contacts transition resistance and on volume conductivity of the crystal. On Suite-voltage dependencies there is a linear plot, angular coefficient which is directly proportional to the diameter of the illuminated surface. The model qualitatively explain the experimental results.