Система автоматизированного расчета надежности микросхем с высокой степенью интеграции
The considered model of the failure rate of CMOS VHSIC design proposed in the article Piskun G.A., Alekseev V.F., "Improvement of mathematical models calculating of CMOS VLSIC taking into account features of impact of electrostatic discharge", published in the first issue of the journal "Technologies of electromagnetic compatibility" for the year 2016. It is shown that the authors claim that this model "...will more accurately assess the reliability of CMOS VHSIC design" is fundamentally flawed and its application will inevitably lead to inadequate results. Alternatively, the proposed model of the failure rate of CMOS VHSIC design, which also allows to take into account the views of ESD, but based on the use of resistance characteristics of CMOS VHSIC to the effects of ESD.
The article considers the questions assessing the reliability of mechanical components used in the electronic equipment in the early stages of design. The calculations of failure rates springs shock absorbers according to various methods. It is shown that the use of models failure rates of mechanical elements, taking into account the peculiarities of their structural and technological performance, not only allows us to solve the problem of calculating, but also to ensure the required level of reliability and mechanical components, and containing electronic equipment.