Моделирование 3D наносхемотехники
The book presents the basic concepts of the theory of transition circuitry required for the development of a new element base of different types of supercomputers. The theory of transition circuitry component distinguishes the new concept of synthesis of nanostructures, in which the minimum component in the synthesis schemes is not a transistor, and the material and the transition (connection) between the materials. The data of experimental 2D and 3D modeling of the physical and electrical processes in silicon nanostructures transition with minimal topological size of 10-20 nm and a comparative analysis of 4 types of circuitry.
The book can be recommended to scientists, post-graduate and engineers specializing in the development of the element base of supercomputing and alternative computing systems, as well as bachelors and masters who study the field of "Nanotechnology and Microsystem Technology", "Electronics and Nanoelectronics", "Computer systems, complexes and networks. "