The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen plasma radio-frequency plasma treatment performed by a setup with the parallel-plate-type reactor. This is due to the fact that setup allows to have lesser degradation of charge characteristics of the gate dielectric in comparison with a setup with the cylindrical quartz reactor. The radio-frequency plasma treatment stimulates restructuring of SiO2 film and, as a result, diminishes possibility of sample breakdown and raises injection and radiation stability of the samples.
Let G be a semisimple algebraic group whose decomposition into the product of simple components does not contain simple groups of type A, and P⊆G be a parabolic subgroup. Extending the results of Popov , we enumerate all triples (G, P, n) such that (a) there exists an open G-orbit on the multiple flag variety G/P × G/P × . . . × G/P (n factors), (b) the number of G-orbits on the multiple flag variety is finite.
I give the explicit formula for the (set-theoretical) system of Resultants of m+1 homogeneous polynomials in n+1 variables