Тезисы докладов 17 научно-технической конференции по радиационной стойкости электронных систем «Стойкость-2014»: Научн. техн. сб. 2014
A compact BSIMSOI-RAD macromodel for SOI/SOS CMOS transistors is developed that takes into account the radiation effects. An automated procedure for determination of macromodel parameters is described and shown to be useful for analyzing radiation hardness of CMOS IC fragments depending on the total absorbed dose. The simulation time is estimated.
The main content of the training manual is:consideration of the issues of the effect of radiation creating structural defects on the main parameters of bipolar transistors, Consider issues related to the influence of ionization factors on the operation of transistors (radiation transients), the effect of nuclear reactions and fast annealing on the parameters of transistors is considered; Classification of radiation effects in bipolar transistors is given.
Let G be a semisimple algebraic group whose decomposition into the product of simple components does not contain simple groups of type A, and P⊆G be a parabolic subgroup. Extending the results of Popov , we enumerate all triples (G, P, n) such that (a) there exists an open G-orbit on the multiple flag variety G/P × G/P × . . . × G/P (n factors), (b) the number of G-orbits on the multiple flag variety is finite.
I give the explicit formula for the (set-theoretical) system of Resultants of m+1 homogeneous polynomials in n+1 variables