Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector's pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.
New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the factories to produce new competitive products without significant capital expenditures for the modernization of production capacities.
The possibility to observe a macroscopically coherent state in a gas of two-dimensional direct excitons at temperatures up to tens of Kelvin is described. The dramatic increase of the exciton lifetime allowing effective thermalization is predicted for the o -resonant cavities that strongly suppress exciton recombination. The material systems considered are single GaAs quantum wells of di erent thicknesses and a transition metal dichalcogenide monolayer, embedded in a layered medium with subwavelength period. The quantum hydrodynamic approach combined with the Bogoliubov description yield the one-body density matrix of the system. Employing the Kosterlitz-Thouless \dielectric screening" problem to account for vortices, we obtain the superfluid and the condensate densities and the critical temperature of the Berezinskii-Kosterlitz-Thouless crossover, for all geometries in consideration. Experimentally observable manyfold increase of the photoluminescence intensity from the structure as it is cooled below the critical temperature is predicted.
In this paper we performed 2D and 3D device simulations to analyze the impact of technology scaling on the lattice heating in n-channel bulk silicon and silicon-on-insulator MOS transistors with gate lengths from 0.5 to 0.1 um. Maximum lattice temperatures and transistor thermal resistances for different gate lengths and bias voltages were calculated. The increase in device temperature and thermal resistance with transistor scaling was shown.